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| Presentation | 2006-08-18 09:25 Experimental Study on Breakdown of Mobility Universality in (110)-oriented <100>-directed pMOSFETs Ken Shimizu, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) Link to ES Tech. Rep. Archives:  SDM2006-143 ICD2006-97 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | (110)-oriented pMOSFET is a promising choice for future CMOS device. However, physical origin of breakdown on mobility universality is still unknown. This paper describes experimental determination of the value of  by changing SOI thickness and temperature. It is found that in the case of <100>-directed channel on (110)-oriented pMOSFETs,  should be larger than unity, which implies the collapse of mobility universality, when temperature is low or SOI thickness is ultimately thin. The possible origin of universality breakdown is due to direction-dependent scattering mechanisms. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | (110)-oriented pMSOFET / mobility / mobility universality / Ultrathin body SOI MOSFET / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 206, SDM2006-143, pp. 105-109, Aug. 2006. | |
| Paper # | SDM2006-143 | |
| Date of Issue | 2006-08-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-143 ICD2006-97 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2006-08-17 - 2006-08-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experimental Study on Breakdown of Mobility Universality in (110)-oriented <100>-directed pMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | (110)-oriented pMSOFET |
| Keyword(2) | mobility |
| Keyword(3) | mobility universality |
| Keyword(4) | Ultrathin body SOI MOSFET |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Ken Shimizu |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Takuya Saraya |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Toshiro Hiramoto |
| 3rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2006-08-18 09:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2006-143, ICD2006-97 |
| Volume (vol) | vol.106 |
| Number (no) | no.206(SDM), no.207(ICD) |
| Page | pp.105-109 |
| #Pages | 5 |
| Date of Issue | 2006-08-10 (SDM, ICD) |
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