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Paper Abstract and Keywords
Presentation 2006-08-18 15:25
Impact of Random Telegraph Signals on Scaling of Multilevel Flash Memories
Hideaki Kurata, Kazuo Otsuga, Akira Kotabe, Shinya Kajiyama, Taro Osabe, Yoshitaka Sasago (Hitachi), Shunichi Narumi, Kenji Tokami, Shiro Kamohara, Osamu Tsuchiya (Renesas) Link to ES Tech. Rep. Archives: SDM2006-153 ICD2006-107
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes for the first time the observation of the threshold voltage (Vth) fluctuation due to random telegraph signal (RTS) in flash memory. We acquired large amount of data of Vth fluctuation by using a 90-nm node memory array and confirmed that a few memory cells have large RTS fluctuation exceeding 0.2 V. We also found that the tail bits are generated due to RTS in multilevel flash operation by simulation and measurement results. The amount of Vth broadening due to the tail bits becomes larger as the scaling advances, and reaches to more than 0.3 V in 45-nm node. Thus the RTS becomes prominent issue for the design of multilevel flash memory in 45-nm node and beyond.
Keyword (in Japanese) (See Japanese page) 
(in English) Random telegraph signal / Flash memory / Multilevel cell technology / Vth fluctuation / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 207, ICD2006-107, pp. 161-166, Aug. 2006.
Paper # ICD2006-107 
Date of Issue 2006-08-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: SDM2006-153 ICD2006-107

Conference Information
Committee ICD SDM  
Conference Date 2006-08-17 - 2006-08-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2006-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of Random Telegraph Signals on Scaling of Multilevel Flash Memories 
Sub Title (in English)  
Keyword(1) Random telegraph signal  
Keyword(2) Flash memory  
Keyword(3) Multilevel cell technology  
Keyword(4) Vth fluctuation  
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1st Author's Name Hideaki Kurata  
1st Author's Affiliation Hitachi, Ltd. (Hitachi)
2nd Author's Name Kazuo Otsuga  
2nd Author's Affiliation Hitachi, Ltd. (Hitachi)
3rd Author's Name Akira Kotabe  
3rd Author's Affiliation Hitachi, Ltd. (Hitachi)
4th Author's Name Shinya Kajiyama  
4th Author's Affiliation Hitachi, Ltd. (Hitachi)
5th Author's Name Taro Osabe  
5th Author's Affiliation Hitachi, Ltd. (Hitachi)
6th Author's Name Yoshitaka Sasago  
6th Author's Affiliation Hitachi, Ltd. (Hitachi)
7th Author's Name Shunichi Narumi  
7th Author's Affiliation Renesas Technology Corp. (Renesas)
8th Author's Name Kenji Tokami  
8th Author's Affiliation Renesas Technology Corp. (Renesas)
9th Author's Name Shiro Kamohara  
9th Author's Affiliation Renesas Technology Corp. (Renesas)
10th Author's Name Osamu Tsuchiya  
10th Author's Affiliation Renesas Technology Corp. (Renesas)
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Speaker Author-1 
Date Time 2006-08-18 15:25:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2006-153, ICD2006-107 
Volume (vol) vol.106 
Number (no) no.206(SDM), no.207(ICD) 
Page pp.161-166 
#Pages
Date of Issue 2006-08-10 (SDM, ICD) 


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