IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2006-08-18 10:50
[Special Invited Talk] High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology
Shinpei Yamaguchi, Kaori Tai, Tomoyuki Hirano, Takshi Ando, Susumu Hiyama, Junli Wang, Yoshiya Hagimoto, Yoshihiko Nagahama, Takayoshi Kato, Kaori Nagano, Mayumi Yamanaka, Sanae Terauchi, Saori Kanda, Ryo Yamamoto, Yasushi Tateshita (STDG, SONY Corp.) Link to ES Tech. Rep. Archives: SDM2006-146 ICD2006-100
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
(in English) / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 206, SDM2006-146, pp. 121-126, Aug. 2006.
Paper # SDM2006-146 
Date of Issue 2006-08-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: SDM2006-146 ICD2006-100

Conference Information
Committee ICD SDM  
Conference Date 2006-08-17 - 2006-08-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2006-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology 
Sub Title (in English)  
Keyword(1)  
Keyword(2)  
Keyword(3)  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shinpei Yamaguchi  
1st Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
2nd Author's Name Kaori Tai  
2nd Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
3rd Author's Name Tomoyuki Hirano  
3rd Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
4th Author's Name Takshi Ando  
4th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
5th Author's Name Susumu Hiyama  
5th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
6th Author's Name Junli Wang  
6th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
7th Author's Name Yoshiya Hagimoto  
7th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
8th Author's Name Yoshihiko Nagahama  
8th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
9th Author's Name Takayoshi Kato  
9th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
10th Author's Name Kaori Nagano  
10th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
11th Author's Name Mayumi Yamanaka  
11th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
12th Author's Name Sanae Terauchi  
12th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
13th Author's Name Saori Kanda  
13th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
14th Author's Name Ryo Yamamoto  
14th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
15th Author's Name Yasushi Tateshita  
15th Author's Affiliation Semiconductor Technology Development Group, Semiconductor Business Unit, SONY Corporation (STDG, SONY Corp.)
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2006-08-18 10:50:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2006-146, ICD2006-100 
Volume (vol) vol.106 
Number (no) no.206(SDM), no.207(ICD) 
Page pp.121-126 
#Pages
Date of Issue 2006-08-10 (SDM, ICD) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan