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| Presentation | 2006-08-17 11:45 Critical temperature switch circuit with CMOS subthreshold region Atsushi Hagiwara, Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.) Link to ES Tech. Rep. Archives:  SDM2006-131 ICD2006-85 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We propose a thermosensing circuit that changes its internal state abruptly at a threshold temperature. The circuit switches its output-node voltage from a high value to a low one when temperature exceeds the threshold. The circuit makes use of the transition of a MOSFET resistor from strong-inversion operation to week-inversion or subthreshold operation. The threshold temperature for the transition can be set to a desired value from 0℃ to 100℃ by adjusting the parameters of MOSFETs in the circuit. The circuit can be made with a standard CMOS process and can be used as over-temperature detectors and over-current protectors for LSI circuits. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMOS / subthreshold current / temperature detection / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 207, ICD2006-85, pp. 37-42, Aug. 2006. | |
| Paper # | ICD2006-85 | |
| Date of Issue | 2006-08-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-131 ICD2006-85 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2006-08-17 - 2006-08-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2006-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Critical temperature switch circuit with CMOS subthreshold region |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | subthreshold current |
| Keyword(3) | temperature detection |
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| 1st Author's Name | Atsushi Hagiwara |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Tetsuya Hirose |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Tetsuya Asai |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Yoshihito Amemiya |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2006-08-17 11:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | SDM2006-131, ICD2006-85 |
| Volume (vol) | vol.106 |
| Number (no) | no.206(SDM), no.207(ICD) |
| Page | pp.37-42 |
| #Pages | 6 |
| Date of Issue | 2006-08-10 (SDM, ICD) |
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