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| Presentation | 2006-06-30 10:10 100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure Ryuzo Iga, Yasuhiro Kondo, Tatsuya Takeshita, Kenji Kishi, Masahiro Yuda (NTT) Link to ES Tech. Rep. Archives:  OPE2006-16 LQE2006-20 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated 1.3-um InGaAsP DFB lasers buried with a high-resistive ruthenium (Ru)-doped InP and evaluated 10Gb/s operation of the buried laser at high temperatures. The results of L-I characteristics showed that more than 10 mW of output power was obtained at 95 ℃ and CW operation up to 120 ℃ was observed. The high relaxation oscillation frequency of 10 GHz was obtained at 95 ℃. Clear eye openings under 10-Gbit/s direct modulation were achieved from 0 to 100 ℃. No significant degradation was observed for over 5000 hrs under APC mode with a constant output power of 8 mW at 85 ℃. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | high-resistive Ru-InP / buried structure / suppression of Zn diffusion / InGaAsP-MQW DFB laser / 10-Gb/s direct modulation / high temperature operation / relaxation oscillation frequency / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 134, LQE2006-20, pp. 7-10, June 2006. | |
| Paper # | LQE2006-20 | |
| Date of Issue | 2006-06-23 (OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: OPE2006-16 LQE2006-20 |
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| Conference Information | |
| Committee | OPE LQE |
| Conference Date | 2006-06-30 - 2006-06-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Quantum Effect Optical Devices (optical signal processing, LD, optical amplification, modulation etc.) and Photonic Integrations [ES Summer Meeting on Materials and Devices] |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2006-06-OPE-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure |
| Sub Title (in English) | |
| Keyword(1) | high-resistive Ru-InP |
| Keyword(2) | buried structure |
| Keyword(3) | suppression of Zn diffusion |
| Keyword(4) | InGaAsP-MQW DFB laser |
| Keyword(5) | 10-Gb/s direct modulation |
| Keyword(6) | high temperature operation |
| Keyword(7) | relaxation oscillation frequency |
| Keyword(8) | |
| 1st Author's Name | Ryuzo Iga |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corp. (NTT) |
| 2nd Author's Name | Yasuhiro Kondo |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corp. (NTT) |
| 3rd Author's Name | Tatsuya Takeshita |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corp. (NTT) |
| 4th Author's Name | Kenji Kishi |
| 4th Author's Affiliation | Nippon Telegraph and Telephone Corp. (NTT) |
| 5th Author's Name | Masahiro Yuda |
| 5th Author's Affiliation | Nippon Telegraph and Telephone Corp. (NTT) |
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| Speaker | Author-1 |
| Date Time | 2006-06-30 10:10:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | OPE2006-16, LQE2006-20 |
| Volume (vol) | vol.106 |
| Number (no) | no.133(OPE), no.134(LQE) |
| Page | pp.7-10 |
| #Pages | 4 |
| Date of Issue | 2006-06-23 (OPE, LQE) |
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