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Paper Abstract and Keywords
Presentation 2006-06-22 11:20
Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON
Yuichiro Mitani, Hideki Satake (Toshiba Corp.) Link to ES Tech. Rep. Archives: SDM2006-57
Abstract (in Japanese) (See Japanese page) 
(in English) NBTI(Negative Bias Temperature Instability) has become increasingly serious in the context of effort to develop highly reliable integrated CMOS devices. The NBTI has been explained in terms of interface trap creation through the dissociation of Si-H bond and subsequent diffusion of released hydrogen. In addition, nitrogen incorporation into the gate oxide enhances the NBT degradation. However, the mechanism of this NBTI has yet to be fully clarified. In this study, the influence of hydrogen and nitrogen on NBTI has been reinvestigated in order to discuss the mechanism of NBTI.
Keyword (in Japanese) (See Japanese page) 
(in English) NBTI / gate dielectrics / reliability / hydrogen / nitrogen / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 108, SDM2006-57, pp. 87-92, June 2006.
Paper # SDM2006-57 
Date of Issue 2006-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2006-06-21 - 2006-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Faculty Club, Hiroshima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technologies of Dielectric Thin Films for Future Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2006-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON 
Sub Title (in English)  
Keyword(1) NBTI  
Keyword(2) gate dielectrics  
Keyword(3) reliability  
Keyword(4) hydrogen  
Keyword(5) nitrogen  
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Keyword(8)  
1st Author's Name Yuichiro Mitani  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Hideki Satake  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2006-06-22 11:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-57 
Volume (vol) vol.106 
Number (no) no.108 
Page pp.87-92 
#Pages
Date of Issue 2006-06-14 (SDM) 


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