Paper Abstract and Keywords |
Presentation |
2006-06-22 11:20
Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON Yuichiro Mitani, Hideki Satake (Toshiba Corp.) Link to ES Tech. Rep. Archives: SDM2006-57 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
NBTI(Negative Bias Temperature Instability) has become increasingly serious in the context of effort to develop highly reliable integrated CMOS devices. The NBTI has been explained in terms of interface trap creation through the dissociation of Si-H bond and subsequent diffusion of released hydrogen. In addition, nitrogen incorporation into the gate oxide enhances the NBT degradation. However, the mechanism of this NBTI has yet to be fully clarified. In this study, the influence of hydrogen and nitrogen on NBTI has been reinvestigated in order to discuss the mechanism of NBTI. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NBTI / gate dielectrics / reliability / hydrogen / nitrogen / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-57, pp. 87-92, June 2006. |
Paper # |
SDM2006-57 |
Date of Issue |
2006-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: SDM2006-57 |
Conference Information |
Committee |
SDM |
Conference Date |
2006-06-21 - 2006-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Faculty Club, Hiroshima Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2006-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON |
Sub Title (in English) |
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Keyword(1) |
NBTI |
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gate dielectrics |
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reliability |
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hydrogen |
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nitrogen |
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1st Author's Name |
Yuichiro Mitani |
1st Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
2nd Author's Name |
Hideki Satake |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
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Speaker |
Author-1 |
Date Time |
2006-06-22 11:20:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2006-57 |
Volume (vol) |
vol.106 |
Number (no) |
no.108 |
Page |
pp.87-92 |
#Pages |
6 |
Date of Issue |
2006-06-14 (SDM) |
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