Paper Abstract and Keywords |
Presentation |
2006-06-22 09:00
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation
-- From Real-time XPS Measurements -- Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) Link to ES Tech. Rep. Archives: SDM2006-52 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 16´2 reconstruction of the Si(110) surface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si surface / Si(110) / Dry oxidation / Synchrotron Radiation / Photoemission Spectroscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-52, pp. 61-63, June 2006. |
Paper # |
SDM2006-52 |
Date of Issue |
2006-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: SDM2006-52 |
Conference Information |
Committee |
SDM |
Conference Date |
2006-06-21 - 2006-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Faculty Club, Hiroshima Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2006-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation |
Sub Title (in English) |
From Real-time XPS Measurements |
Keyword(1) |
Si surface |
Keyword(2) |
Si(110) |
Keyword(3) |
Dry oxidation |
Keyword(4) |
Synchrotron Radiation |
Keyword(5) |
Photoemission Spectroscopy |
Keyword(6) |
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Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Maki Suemitsu |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Atsushi Kato |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Hideaki Togashi |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Atsushi Konno |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Yuden Teraoka |
5th Author's Affiliation |
Japan Atomic Energy Agency (JAEA) |
6th Author's Name |
Akitaka Yoshigoe |
6th Author's Affiliation |
Japan Atomic Energy Agency (JAEA) |
7th Author's Name |
Yuzuru Narita |
7th Author's Affiliation |
Kyushu Institute of Technology (KIT) |
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Speaker |
Author-1 |
Date Time |
2006-06-22 09:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2006-52 |
Volume (vol) |
vol.106 |
Number (no) |
no.108 |
Page |
pp.61-63 |
#Pages |
3 |
Date of Issue |
2006-06-14 (SDM) |
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