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Paper Abstract and Keywords
Presentation 2006-06-22 09:00
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation -- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) Link to ES Tech. Rep. Archives: SDM2006-52
Abstract (in Japanese) (See Japanese page) 
(in English) By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an O1s state with a weaker binding energy. As the oxidation proceeds, another O1s state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 16´2 reconstruction of the Si(110) surface.
Keyword (in Japanese) (See Japanese page) 
(in English) Si surface / Si(110) / Dry oxidation / Synchrotron Radiation / Photoemission Spectroscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 108, SDM2006-52, pp. 61-63, June 2006.
Paper # SDM2006-52 
Date of Issue 2006-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: SDM2006-52

Conference Information
Committee SDM  
Conference Date 2006-06-21 - 2006-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Faculty Club, Hiroshima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technologies of Dielectric Thin Films for Future Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2006-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation 
Sub Title (in English) From Real-time XPS Measurements 
Keyword(1) Si surface  
Keyword(2) Si(110)  
Keyword(3) Dry oxidation  
Keyword(4) Synchrotron Radiation  
Keyword(5) Photoemission Spectroscopy  
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1st Author's Name Maki Suemitsu  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Atsushi Kato  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Hideaki Togashi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Atsushi Konno  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Yuden Teraoka  
5th Author's Affiliation Japan Atomic Energy Agency (JAEA)
6th Author's Name Akitaka Yoshigoe  
6th Author's Affiliation Japan Atomic Energy Agency (JAEA)
7th Author's Name Yuzuru Narita  
7th Author's Affiliation Kyushu Institute of Technology (KIT)
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Speaker Author-1 
Date Time 2006-06-22 09:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-52 
Volume (vol) vol.106 
Number (no) no.108 
Page pp.61-63 
#Pages
Date of Issue 2006-06-14 (SDM) 


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