Paper Abstract and Keywords |
Presentation |
2006-06-22 09:25
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface Susumu Hiyama, Junli Wang, Takayoshi Kato, Tomoyuki Hirano, Kaori Tai, Hayato Iwamoto (Sony) Link to ES Tech. Rep. Archives: SDM2006-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigated gate oxide process dependence of hole mobility on Si(110) surface. We used RTO and radical oxidization as gate oxide processes. As a result, it was found that the hole mobility of radical oxide was higher than that of RTO oxide by approximately 10%. And from the result of TEM analysis, the SiO2/Si interface roughness of radical oxide was found to be smaller than that of RTO oxide. Therefore, it was considered that the improvement of hole mobility by radical oxide was caused by reduction of interface roughness scattering. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si(110)subatrate / mobility / radical oxide / interface roughness / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-53, pp. 65-69, June 2006. |
Paper # |
SDM2006-53 |
Date of Issue |
2006-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: SDM2006-53 |
Conference Information |
Committee |
SDM |
Conference Date |
2006-06-21 - 2006-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Faculty Club, Hiroshima Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2006-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface |
Sub Title (in English) |
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Keyword(1) |
Si(110)subatrate |
Keyword(2) |
mobility |
Keyword(3) |
radical oxide |
Keyword(4) |
interface roughness |
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1st Author's Name |
Susumu Hiyama |
1st Author's Affiliation |
Sony Corporation (Sony) |
2nd Author's Name |
Junli Wang |
2nd Author's Affiliation |
Sony Corporation (Sony) |
3rd Author's Name |
Takayoshi Kato |
3rd Author's Affiliation |
Sony Corporation (Sony) |
4th Author's Name |
Tomoyuki Hirano |
4th Author's Affiliation |
Sony Corporation (Sony) |
5th Author's Name |
Kaori Tai |
5th Author's Affiliation |
Sony Corporation (Sony) |
6th Author's Name |
Hayato Iwamoto |
6th Author's Affiliation |
Sony Corporation (Sony) |
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Speaker |
Author-1 |
Date Time |
2006-06-22 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2006-53 |
Volume (vol) |
vol.106 |
Number (no) |
no.108 |
Page |
pp.65-69 |
#Pages |
5 |
Date of Issue |
2006-06-14 (SDM) |
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