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Paper Abstract and Keywords
Presentation 2006-06-22 09:25
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface
Susumu Hiyama, Junli Wang, Takayoshi Kato, Tomoyuki Hirano, Kaori Tai, Hayato Iwamoto (Sony) Link to ES Tech. Rep. Archives: SDM2006-53
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated gate oxide process dependence of hole mobility on Si(110) surface. We used RTO and radical oxidization as gate oxide processes. As a result, it was found that the hole mobility of radical oxide was higher than that of RTO oxide by approximately 10%. And from the result of TEM analysis, the SiO2/Si interface roughness of radical oxide was found to be smaller than that of RTO oxide. Therefore, it was considered that the improvement of hole mobility by radical oxide was caused by reduction of interface roughness scattering.
Keyword (in Japanese) (See Japanese page) 
(in English) Si(110)subatrate / mobility / radical oxide / interface roughness / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 108, SDM2006-53, pp. 65-69, June 2006.
Paper # SDM2006-53 
Date of Issue 2006-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2006-06-21 - 2006-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Faculty Club, Hiroshima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technologies of Dielectric Thin Films for Future Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2006-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface 
Sub Title (in English)  
Keyword(1) Si(110)subatrate  
Keyword(2) mobility  
Keyword(3) radical oxide  
Keyword(4) interface roughness  
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1st Author's Name Susumu Hiyama  
1st Author's Affiliation Sony Corporation (Sony)
2nd Author's Name Junli Wang  
2nd Author's Affiliation Sony Corporation (Sony)
3rd Author's Name Takayoshi Kato  
3rd Author's Affiliation Sony Corporation (Sony)
4th Author's Name Tomoyuki Hirano  
4th Author's Affiliation Sony Corporation (Sony)
5th Author's Name Kaori Tai  
5th Author's Affiliation Sony Corporation (Sony)
6th Author's Name Hayato Iwamoto  
6th Author's Affiliation Sony Corporation (Sony)
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Speaker Author-1 
Date Time 2006-06-22 09:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-53 
Volume (vol) vol.106 
Number (no) no.108 
Page pp.65-69 
#Pages
Date of Issue 2006-06-14 (SDM) 


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