| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2006-06-21 16:25 Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) Link to ES Tech. Rep. Archives:  SDM2006-49 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS), where the Ni-silicide/SiO2 interfaces were analyzed through SiO2 for the samples after removing the Si substrate from the backside in addition to the analysis from the surface side to evaluate the correlation between the effective work function and chemical composition or impurity concentration at the interface. Raman scattering spectra measured from the Ni-silicide surface sides show that mono-silicide phase are dominant but partly Si-rich and N-rich phases coexist. On the other hand, in Raman spectra of Ni-silicides measured from the back side through SiO2 layer, no signals due to Ni-rich phase was detectable but the signals due to mostly mono-silicide phase and slightly Si-rich phase was observed. The formation of a Si-rich region at and near the Ni-silicides/SiO2 interface was also confirmed by XPS measurements from the back side. In the case with P-, Sb-, and As-implanted samples, the impurities piled up at the Ni-silicide/SiO2 interface but no oxide component of the impurities was detected. In contrast, for B-implanted case, no pile-up of B atoms but the BOx component was observed at the interface. For P- and Sb-implanted Ni-silicides, the difference in effective work function between the Ni-silicide surface and the Ni-silicide/SiO2 interface can be interpreted mainly in terms of the difference in the Ni composition since a similar change in the work function was also observed in pure Ni-silicide case. On the other hand, for the B-implanted Ni-silicide, it is suggested that the effective work function lowering with the decrease in the Ni composition is suppressed remarkably. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ni-silicide / work function / Raman scattering spectroscopy / X-ray photoelectron spectroscopy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 108, SDM2006-49, pp. 43-48, June 2006. | |
| Paper # | SDM2006-49 | |
| Date of Issue | 2006-06-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-49 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2006-06-21 - 2006-06-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Faculty Club, Hiroshima Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technologies of Dielectric Thin Films for Future Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 |
| Sub Title (in English) | |
| Keyword(1) | Ni-silicide |
| Keyword(2) | work function |
| Keyword(3) | Raman scattering spectroscopy |
| Keyword(4) | X-ray photoelectron spectroscopy |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiromichi Yoshinaga |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Daisuke Azuma |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Hideki Murakami |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Akio Ohta |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Yuuki Munetaka |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Seiichiro Higashi |
| 6th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 8th Author's Name | Takayuki Aoyama |
| 8th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 9th Author's Name | Kimihiko Hosaka |
| 9th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 10th Author's Name | Kentaro Shibahara |
| 10th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2006-06-21 16:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2006-49 |
| Volume (vol) | vol.106 |
| Number (no) | no.108 |
| Page | pp.43-48 |
| #Pages | 6 |
| Date of Issue | 2006-06-14 (SDM) |
[Return to Top Page]