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| Presentation | 2006-06-21 13:00 Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) Link to ES Tech. Rep. Archives:  SDM2006-42 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid an interface transition layer which is formed at thermally-grown SiO2/SiC interface, HfO2 and Al2O3 films were deposited on SiC by source-gas pulse introduced MOCVD at low temperature. Capacitance – voltage (C-V) characteristics and X-ray photoelectron spectroscopy (XPS) measurement revealed that HfO2/SiC and Al2O3/SiC fabricated at 190 ºC have no sub-oxide at interface and lower interface state densities than typical thermally-grown SiO2/SiC. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / MOSFET / power device / interface state / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 108, SDM2006-42, pp. 1-5, June 2006. | |
| Paper # | SDM2006-42 | |
| Date of Issue | 2006-06-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-42 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2006-06-21 - 2006-06-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Faculty Club, Hiroshima Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technologies of Dielectric Thin Films for Future Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | power device |
| Keyword(4) | interface state |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Shiro Hino |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Tomohiro Hatayama |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Eisuke Tokumitsu |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Naruhisa Miura |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
| 5th Author's Name | Tatsuo Oomori |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
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| Speaker | Author-1 |
| Date Time | 2006-06-21 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2006-42 |
| Volume (vol) | vol.106 |
| Number (no) | no.108 |
| Page | pp.1-5 |
| #Pages | 5 |
| Date of Issue | 2006-06-14 (SDM) |
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