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| Presentation | 2006-06-21 16:50 Surface Microroughness of Silicon -- Mechanism and Its Reduction -- Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi (Tohoku Univ.) Link to ES Tech. Rep. Archives:  SDM2006-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | It is known that silicon surfaces are roughened with wet processes. It was revealed that light, such as fluorescent light used prevalently in the clean room, surprisingly affects the oxidation of silicon (photoinduced oxidation) and causes roughness (photoinduced roughness). The origin of the roughness was considered to be the large numbers of nano- or sub-nanosize oxides induced by the light illumination. Roughness could be improved by light shading, but we have found that very small hillocks were induced even in a dark ambient environment. In this case, dissolved oxygen in the solution has affected the roughness. The silicon surface is found to be barely roughened even in such alkali solutions as ammonia solutions when processed in an environment without oxygen and light. Moreover, it was found that HF treatment in the absence of light and oxygen has a planarizing effect. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | silicon / roughness / oxidation / photoinduced roughness / photoinduced oxidation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 108, SDM2006-50, pp. 49-54, June 2006. | |
| Paper # | SDM2006-50 | |
| Date of Issue | 2006-06-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-50 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2006-06-21 - 2006-06-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Faculty Club, Hiroshima Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technologies of Dielectric Thin Films for Future Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface Microroughness of Silicon |
| Sub Title (in English) | Mechanism and Its Reduction |
| Keyword(1) | silicon |
| Keyword(2) | roughness |
| Keyword(3) | oxidation |
| Keyword(4) | photoinduced roughness |
| Keyword(5) | photoinduced oxidation |
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| Keyword(7) | |
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| 1st Author's Name | Hitoshi Morinaga |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Kenji Shimaoka |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Tadahiro Ohmi |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2006-06-21 16:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2006-50 |
| Volume (vol) | vol.106 |
| Number (no) | no.108 |
| Page | pp.49-54 |
| #Pages | 6 |
| Date of Issue | 2006-06-14 (SDM) |
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