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| Presentation | 2006-05-19 14:00 Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.) Link to ES Tech. Rep. Archives:  ED2006-38 CPM2006-25 SDM2006-38 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e.g., SiC and GaN. This slow component is thought to be due to minority carrier traps: excited minority carriers are captured by the traps, and excess majority carriers remain in the band. From temperature dependence of the slow component, it is in principle possible to estimate trap properties. However, the necessary analysis is not simple, because both capture and emission processes should be taken into account, in contrast to the transient capacitance measurement (such as deep level transient spectroscopy), where the pure emission process can be observed. In this paper, excess carrier decay curves are calculated for four typical cases, taking 4H-SiC as an example, and it is discussed how the trap properties can be deduced from the decay curves. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | carrier lifetime / minority carrier trap / temperature dependence / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 45, ED2006-38, pp. 101-106, May 2006. | |
| Paper # | ED2006-38 | |
| Date of Issue | 2006-05-11 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2006-38 CPM2006-25 SDM2006-38 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2006-05-18 - 2006-05-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2006-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of trap parameters from a slow component of excess carrier decay curves |
| Sub Title (in English) | |
| Keyword(1) | carrier lifetime |
| Keyword(2) | minority carrier trap |
| Keyword(3) | temperature dependence |
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| 1st Author's Name | Masaya Ichimura |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Technol.) |
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| Speaker | Author-1 |
| Date Time | 2006-05-19 14:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2006-38, CPM2006-25, SDM2006-38 |
| Volume (vol) | vol.106 |
| Number (no) | no.45(ED), no.46(CPM), no.47(SDM) |
| Page | pp.101-106 |
| #Pages | 6 |
| Date of Issue | 2006-05-11 (ED, CPM, SDM) |
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