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| Presentation | 2006-05-19 09:25 Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) Link to ES Tech. Rep. Archives:  ED2006-30 CPM2006-17 SDM2006-30 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices can fabricate with post-growth processes was proposed and tried to realize. g-Al2O3 epitaxial layer used as both epitaxial template for GaN growth and etch stop layer for device process. GaN epitaxial layer was grown by OMVPE(Organometallic vapor phase epitaxy) and Si top layer was fabricated by using wafer bonding technique. In order to obtain GaN layer with flat surface and good crystalline quality, two-step growth, in which low V/III ratio was used in initial stage to enhance three dimension growth, then high V/III ratio to obtain flat surface was effective. Secondly, wefer-bonding conditions for GaN and Si were investigated. Low temperature grown GaN on Si was effective to avoid Si surface nitridation during the boding process and enhance the mass-transport process. Si/GaN/g-Al2O3/Si structure was realized by using these techniques. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | OEICs / OMVPE / g-Al2O3 / wafer-bonding / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 46, CPM2006-17, pp. 55-60, May 2006. | |
| Paper # | CPM2006-17 | |
| Date of Issue | 2006-05-11 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2006-30 CPM2006-17 SDM2006-30 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2006-05-18 - 2006-05-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2006-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heteroepitaxy of GaN for Si-GaN OEIC |
| Sub Title (in English) | |
| Keyword(1) | OEICs |
| Keyword(2) | OMVPE |
| Keyword(3) | g-Al2O3 |
| Keyword(4) | wafer-bonding |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tatsuya Kawano |
| 1st Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 2nd Author's Name | Susumu Hatakenaka |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 3rd Author's Name | Mikinori Itoh |
| 3rd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 4th Author's Name | Akihiro Wakahara |
| 4th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 5th Author's Name | Hiroshi Okada |
| 5th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 6th Author's Name | Makoto Ishida |
| 6th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
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| Speaker | Author-1 |
| Date Time | 2006-05-19 09:25:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2006-30, CPM2006-17, SDM2006-30 |
| Volume (vol) | vol.106 |
| Number (no) | no.45(ED), no.46(CPM), no.47(SDM) |
| Page | pp.55-60 |
| #Pages | 6 |
| Date of Issue | 2006-05-11 (ED, CPM, SDM) |
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