Paper Abstract and Keywords |
Presentation |
2006-04-21 14:55
High-Power Laser Diodes for DVD-R/RW/RAM by 4-inch Full-Wafer Process Technology Hiroyuki Sumitomo, Satoshi Kajiyama, Hiroyuki Oguri, Takeshi Sakashita, Shinichi Domoto, Kensei Nakao, Toru Yamamoto, Tutomu Komatani, Hiroshi Kawakubo, Masanori Ono, Toshiaki Maejima, Shigekazu Izumi (EUD) Link to ES Tech. Rep. Archives: CPM2006-5 OPE2006-5 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have successfully fabricated 650-nm band single lateral-mode high-power laser diodes (LDs) by using the 4-inch full-wafer process technology. We realized the high throughput LD production with high-power and reliable performances. The LD characteristics show excellent uniformity over a 88mm diameter area of the 4-inch wafer, e.g. (standard deviation/average) = ±2.3 % for Ith, and ±1.1 % for slope efficiency. The output power more than 350 mW had been obtained with stable lateral mode operation under the operation current 600 mA even at the high temperature 80 ℃. In addition, the operation voltage had been suppressed around 3.0 V even at high power operation by optimizing the ridge formation process and reducing the series resistance. These results confer the promising way to realize the high-speed (over 8×) dual layer recordable DVD systems. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Laser Diode / 4 inch / High Power / DVD / AlGaInP / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 17, R2006-5, pp. 23-28, April 2006. |
Paper # |
R2006-5 |
Date of Issue |
2006-04-14 (R, CPM, OPE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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