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Paper Abstract and Keywords
Presentation 2006-01-26 10:30
Phase Change RAM Operated with 1.5-V CMOS as Low Cost Embedded Memory
Satoru Hanzawa, Kenichi Osada, Takayuki Kawahara, Riichiro Takemura (Hitachi CRL), Naoki Kitai (Hitachi ULSI), Norikatsu Takaura, Nozomu Matsuzaki, Kenzo Kurotsuchi (Hitachi CRL), Hiroshi Moriya (Hitachi MERL), Masahiro Moniwa (Renesas) Link to ES Tech. Rep. Archives: ICD2005-206
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes a phase change (PC) RAM operated at the lowest possible voltage, 1.5 V, with a CMOS memory array, using PC material with the lowest RESET current. We discuss the margins for RESET/SET/READ operations based on measurement results and identified that it is impossible to distinguish between RESET/SET operations by controlling the bit-line voltage. We propose a new tri-level voltage word-line control (3LV-WL) scheme to clearly operate SET operations. Moreover, we investigated the READ disturb operation and developed a new reduced-actual-READ-access (RA2) scheme to attain 500 times the READ retention time. We also developed a source line control (SLC) scheme to attain an 18% smaller cell size and a 19-F2 memory cell with enough RESET current to clearly reset the PC material. With the application of these approaches, we established RESET/SET/READ operations with the lowest possible voltage, 1.5 V with logic CMOS, for a low-cost embedded memory with a few additional masks.
Keyword (in Japanese) (See Japanese page) 
(in English) Phase change / Embedded memory / Tri-level voltage word-line control scheme / Reduced-actual-READ-access scheme / Source line control scheme / / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 569, ICD2005-206, pp. 7-12, Jan. 2006.
Paper # ICD2005-206 
Date of Issue 2006-01-19 (ICD) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee ICD ITE-CE  
Conference Date 2006-01-26 - 2006-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2006-01-ICD-ITE-CE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Phase Change RAM Operated with 1.5-V CMOS as Low Cost Embedded Memory 
Sub Title (in English)  
Keyword(1) Phase change  
Keyword(2) Embedded memory  
Keyword(3) Tri-level voltage word-line control scheme  
Keyword(4) Reduced-actual-READ-access scheme  
Keyword(5) Source line control scheme  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Satoru Hanzawa  
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
2nd Author's Name Kenichi Osada  
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
3rd Author's Name Takayuki Kawahara  
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
4th Author's Name Riichiro Takemura  
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
5th Author's Name Naoki Kitai  
5th Author's Affiliation Hitachi ULSI Systems Co. (Hitachi ULSI)
6th Author's Name Norikatsu Takaura  
6th Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
7th Author's Name Nozomu Matsuzaki  
7th Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
8th Author's Name Kenzo Kurotsuchi  
8th Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi CRL)
9th Author's Name Hiroshi Moriya  
9th Author's Affiliation Mechanical Engineering Research Laboratory, Hitachi, Ltd. (Hitachi MERL)
10th Author's Name Masahiro Moniwa  
10th Author's Affiliation Renesas Corp. (Renesas)
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Speaker Author-1 
Date Time 2006-01-26 10:30:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2005-206 
Volume (vol) vol.105 
Number (no) no.569 
Page pp.7-12 
#Pages
Date of Issue 2006-01-19 (ICD) 


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