Paper Abstract and Keywords |
Presentation |
2006-01-26 15:30
[Invited Talk]
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature
-- Fabrication using SOI and measurements of its characteristics -- Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.) Link to ES Tech. Rep. Archives: ED2005-228 SDM2005-240 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detected with an electrometer, was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors alternately, allows single-electron transfer at room temperature owing to electric-field-assisted shrinkage of the single-electron box. It also achieves fast single-electron transfer (less than 10 ns) and extremely long retention (more than 10^4 s). The electrometer provides high-charge-sensitivity detection (better than 0.005 e/Hz^0.5 at 2 Hz) because of the carefully designed layout of the circuit. We have applied these features to single-electron-based circuits. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
single-electron transfer / single-electron detection / MOSFET / room temperature / circuit / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 549, ED2005-228, pp. 23-28, Jan. 2006. |
Paper # |
ED2005-228 |
Date of Issue |
2006-01-19 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2005-228 SDM2005-240 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2006-01-26 - 2006-01-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
- |
Paper Information |
Registration To |
ED |
Conference Code |
2006-01-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature |
Sub Title (in English) |
Fabrication using SOI and measurements of its characteristics |
Keyword(1) |
single-electron transfer |
Keyword(2) |
single-electron detection |
Keyword(3) |
MOSFET |
Keyword(4) |
room temperature |
Keyword(5) |
circuit |
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1st Author's Name |
Katsuhiko Nishiguchi |
1st Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
2nd Author's Name |
Yukinori Ono |
2nd Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
3rd Author's Name |
Akira Fujiwara |
3rd Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
4th Author's Name |
Hiroshi Inokawa |
4th Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
5th Author's Name |
Yasuo Takahashi |
5th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2006-01-26 15:30:00 |
Presentation Time |
40 minutes |
Registration for |
ED |
Paper # |
ED2005-228, SDM2005-240 |
Volume (vol) |
vol.105 |
Number (no) |
no.549(ED), no.551(SDM) |
Page |
pp.23-28 |
#Pages |
6 |
Date of Issue |
2006-01-19 (ED, SDM) |
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