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Paper Abstract and Keywords
Presentation 2006-01-26 15:30
[Invited Talk] Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature -- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.) Link to ES Tech. Rep. Archives: ED2005-228 SDM2005-240
Abstract (in Japanese) (See Japanese page) 
(in English) A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detected with an electrometer, was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors alternately, allows single-electron transfer at room temperature owing to electric-field-assisted shrinkage of the single-electron box. It also achieves fast single-electron transfer (less than 10 ns) and extremely long retention (more than 10^4 s). The electrometer provides high-charge-sensitivity detection (better than 0.005 e/Hz^0.5 at 2 Hz) because of the carefully designed layout of the circuit. We have applied these features to single-electron-based circuits.
Keyword (in Japanese) (See Japanese page) 
(in English) single-electron transfer / single-electron detection / MOSFET / room temperature / circuit / / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 549, ED2005-228, pp. 23-28, Jan. 2006.
Paper # ED2005-228 
Date of Issue 2006-01-19 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee ED SDM  
Conference Date 2006-01-26 - 2006-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)
Paper Information
Registration To ED 
Conference Code 2006-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature 
Sub Title (in English) Fabrication using SOI and measurements of its characteristics 
Keyword(1) single-electron transfer  
Keyword(2) single-electron detection  
Keyword(3) MOSFET  
Keyword(4) room temperature  
Keyword(5) circuit  
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1st Author's Name Katsuhiko Nishiguchi  
1st Author's Affiliation NTT Basic Research Laboratories (NTT)
2nd Author's Name Yukinori Ono  
2nd Author's Affiliation NTT Basic Research Laboratories (NTT)
3rd Author's Name Akira Fujiwara  
3rd Author's Affiliation NTT Basic Research Laboratories (NTT)
4th Author's Name Hiroshi Inokawa  
4th Author's Affiliation NTT Basic Research Laboratories (NTT)
5th Author's Name Yasuo Takahashi  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2006-01-26 15:30:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2005-228, SDM2005-240 
Volume (vol) vol.105 
Number (no) no.549(ED), no.551(SDM) 
Page pp.23-28 
#Pages
Date of Issue 2006-01-19 (ED, SDM) 


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