Paper Abstract and Keywords |
Presentation |
2006-01-18 15:45
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.) Link to ES Tech. Rep. Archives: ED2005-197 MW2005-151 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We performed full-band Monte Carlo simulations for the hot-electron transistor with the transit region made of the intrinsic semiconductor and whose current was controlled by the gate bias. By producing hot electrons whose kinetic energies were smaller than the energy separation between Γ and L valleys, ballistic transport of those electrons was confirmed. Cutoff frequency over 1THz was confirmed in the device with an emitter width of 20nm and a transit region length of 70nm by the charge control and transient analysis |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Hot Electron Transistor / Ballistic Transport / THz / Gate Control / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 520, ED2005-197, pp. 29-32, Jan. 2006. |
Paper # |
ED2005-197 |
Date of Issue |
2006-01-11 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2005-197 MW2005-151 |
Conference Information |
Committee |
ED MW |
Conference Date |
2006-01-18 - 2006-01-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC and High-Speed, High-Frequency Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2006-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias |
Sub Title (in English) |
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Keyword(1) |
Hot Electron Transistor |
Keyword(2) |
Ballistic Transport |
Keyword(3) |
THz |
Keyword(4) |
Gate Control |
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1st Author's Name |
Nobuya Machida |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
2nd Author's Name |
Mitsuhiko Igarashi |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
3rd Author's Name |
Tomohiro Yamada |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
4th Author's Name |
Yasuyuki Miyamoto |
4th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
5th Author's Name |
Kazuhito Furuya |
5th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
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Speaker |
Author-1 |
Date Time |
2006-01-18 15:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2005-197, MW2005-151 |
Volume (vol) |
vol.105 |
Number (no) |
no.520(ED), no.523(MW) |
Page |
pp.29-32 |
#Pages |
4 |
Date of Issue |
2006-01-11 (ED, MW) |
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