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| Presentation | 2005-12-16 14:00 A Tri-band GaAs FET Power Amplifier Using Lumped Elements Koji Uchida, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo) Link to ES Tech. Rep. Archives:  MW2005-137 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Tri-band GaAs FET power amplifiers with a single transistor using lumped element matching circuits are designed and fabricated. The dual-band GaAs FET power amplifier[12-14] is applied to the tri-band power amplifier configuration by using PIN diode switching. The matching circuits are designed using the Chebyshev low-pass type impedance transformer design method. We investigated the tri-band GaAs FET power amplifiers with a PIN diode and two PIN diodes configurations. Their superior performance is confirmed by experimental study of tri-band GaAs FET power amplifiers, and it is believed that this circuit configuration method is useful technique for downsizing and high performance of multiband amplifiers. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Tri-band power amplifier / Lumped element / Chebyshev low-pass type impedance transformer / GaAs FET / PIN diode / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 486, MW2005-137, pp. 55-60, Dec. 2005. | |
| Paper # | MW2005-137 | |
| Date of Issue | 2005-12-09 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: MW2005-137 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2005-12-16 - 2005-12-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2005-12-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Tri-band GaAs FET Power Amplifier Using Lumped Elements |
| Sub Title (in English) | |
| Keyword(1) | Tri-band power amplifier |
| Keyword(2) | Lumped element |
| Keyword(3) | Chebyshev low-pass type impedance transformer |
| Keyword(4) | GaAs FET |
| Keyword(5) | PIN diode |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koji Uchida |
| 1st Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 3rd Author's Name | Takayuki Fujita |
| 3rd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 4th Author's Name | Kazusuke Maenaka |
| 4th Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
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| Speaker | Author-1 |
| Date Time | 2005-12-16 14:00:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2005-137 |
| Volume (vol) | vol.105 |
| Number (no) | no.486 |
| Page | pp.55-60 |
| #Pages | 6 |
| Date of Issue | 2005-12-09 (MW) |
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