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| Presentation | 2005-12-16 13:35 A Dual-Band GaAs FET Oscillator with Common-Drain Configuration Kenichi Ono, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka (Univ. of Hyogo) Link to ES Tech. Rep. Archives:  MW2005-136 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Dual-band configuration and design method for oscillator using GaAs FET with common-drain configuration are proposed. On common-drain circuit a stub added to gate for peak negative conductance frequency is investigated. 800/1500MHz were chosen dual-band frequencies, and a stub added to gate is set by it. Fundamental circuits which switch a stub added to gate by PIN diode and choose 800/1500MHz are determined. A load circuit is optimized to adjust output power and oscillation frequency, and a dual-band oscillator is fabricated. As a result, this technique’s availability is verified. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Common-Drain / Dual-Band / GaAs FET / Oscillator / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 486, MW2005-136, pp. 49-54, Dec. 2005. | |
| Paper # | MW2005-136 | |
| Date of Issue | 2005-12-09 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: MW2005-136 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2005-12-16 - 2005-12-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2005-12-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Dual-Band GaAs FET Oscillator with Common-Drain Configuration |
| Sub Title (in English) | |
| Keyword(1) | Common-Drain |
| Keyword(2) | Dual-Band |
| Keyword(3) | GaAs FET |
| Keyword(4) | Oscillator |
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| 1st Author's Name | Kenichi Ono |
| 1st Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 3rd Author's Name | Takayuki Fujita |
| 3rd Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
| 4th Author's Name | Kazusuke Maenaka |
| 4th Author's Affiliation | University of Hyogo (Univ. of Hyogo) |
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| Speaker | Author-1 |
| Date Time | 2005-12-16 13:35:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2005-136 |
| Volume (vol) | vol.105 |
| Number (no) | no.486 |
| Page | pp.49-54 |
| #Pages | 6 |
| Date of Issue | 2005-12-09 (MW) |
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