Paper Abstract and Keywords |
Presentation |
2005-11-12 13:00
Preparation and examination of ITO thin film for organic electroluminescence device Kouichi Tsukio, Masaki Takeuchi, Kazuya Morishita, Hidehiko Shimizu, Takeo Maruyama, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.) Link to ES Tech. Rep. Archives: CPM2005-170 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to examine deposition method of the ITO films for transparent organic light emitting diode (OLED) at the low-temperature, the ITO films was prepared by RF-DC coupled magnetron sputtering (RF-DC MS) method. As a result, ITO films deposited by the RF-DC MS method obtained at temperature below 50℃. ITO films deposited by the RF-DC MS method were amorphous and those films had surface roughness (Ra) below 1nm, work function of about 4.8eV and resistivity of 5×10-4Ω・cm. Compared with the luminescence and electrical characteristic of an OLED used nesa glass, the OLED used the ITO film deposited by RF-DC MS method had poor luminescence and electrical characteristic. However, luminescence was able to be observed from the OLED which used the ITO film deposited by RF-DC MS method. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ITO thin film / RF-DC coupled magnetron sputtering method / low temperature deposition / amorphous / organic light emitting diodes (OLEDs) / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 394, CPM2005-170, pp. 43-48, Nov. 2005. |
Paper # |
CPM2005-170 |
Date of Issue |
2005-11-05 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: CPM2005-170 |
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