Paper Abstract and Keywords |
Presentation |
2005-11-12 09:50
Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) Link to ES Tech. Rep. Archives: CPM2005-163 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser-assisted MOCVD (La-MOCVD) using TMI and NH3. Photocatalytic activity of InN1-xOx film is experimentally studied for the first time. Decomposition rate of H2S is evaluated as a photocatalytic activity of InN1-xOx film. We have found that films grown at a temperature in the range RT-200ºC have an excellent photocatalytic activity, which is better than those for the conventional In2O3 and TiO2. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InN1-xOx / MOCVD / NH3 / photolysis / ArF excimer laser / H2S / photocatalyst / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 394, CPM2005-163, pp. 9-12, Nov. 2005. |
Paper # |
CPM2005-163 |
Date of Issue |
2005-11-05 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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