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| Presentation | 2005-11-12 09:00 KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) Link to ES Tech. Rep. Archives:  CPM2005-161 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The KOH etching effects of a GaN buffer in the MOVPE growth of InN on sapphire have been studied. With increasing etching time, the number of GaN grains is decreased and, as a result of that, the grain size of InN is markedly increased. The grain size of InN grown on the 10 min-etched GaN buffer is larger than that of a film grown without GaN buffer. When the GaN etching time is less than 5 min, one InN grain is grown on about ten GaN grains on average. For the etching time of 8-10 min, one GaN grain acts as a nucleation center for one InN grain and no InN nucleation occurs in the areas without GaN grains on the sapphire substrate. The diffusion length of InN species on the sapphire substrate is estimated to be about 1 μm or more. In spite of the enhanced grain growth of InN films grown on the etched buffers, their electrical properties are almost same as those grown without etching. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOVPE / InN / GaN buffer / KOH etching / grain growth / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 394, CPM2005-161, pp. 1-4, Nov. 2005. | |
| Paper # | CPM2005-161 | |
| Date of Issue | 2005-11-05 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: CPM2005-161 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2005-11-11 - 2005-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2005-11-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | InN |
| Keyword(3) | GaN buffer |
| Keyword(4) | KOH etching |
| Keyword(5) | grain growth |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuhiko Nagai |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Hiroshi Miwa |
| 2nd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 3rd Author's Name | Akihiro Hashimoto |
| 3rd Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 4th Author's Name | Akio Yamamoto |
| 4th Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2005-11-12 09:00:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2005-161 |
| Volume (vol) | vol.105 |
| Number (no) | no.394 |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2005-11-05 (CPM) |
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