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Presentation 2005-11-12 10:15
MOVPE growth of high-quality InN on 3c-SiC/Si template
Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) Link to ES Tech. Rep. Archives: CPM2005-164
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, We describe the comparison between MOVPE InN films grown on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) and on a sapphire in the same run. The nitridation of 3c-SiC/Si(111) template at 900ºC for 30min is employed just before the GaN buffer growth. A GaN buffer grown on the nitrided template is uniform, whereas a GaN buffer layer on an un-nitrided template shows island growth. The surface morphology of InN films grown on the nitrided template is similar to that for a film grown on a sapphire substrate. Electrical and optical properties of the InN film grown on the nitrided 3c-SiC/Si(111) template are also comparable to those for an InN film grown on sapphire. Thus, the nitridation of 3c-SiC/Si(111) template is effective to obtain high-quality InN film.
Keyword (in Japanese) (See Japanese page) 
(in English) InN / MOVPE / Si / C-implantation / SiC / nitridation / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 394, CPM2005-164, pp. 13-16, Nov. 2005.
Paper # CPM2005-164 
Date of Issue 2005-11-05 (CPM) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: CPM2005-164

Conference Information
Committee CPM  
Conference Date 2005-11-11 - 2005-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2005-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOVPE growth of high-quality InN on 3c-SiC/Si template 
Sub Title (in English)  
Keyword(1) InN  
Keyword(2) MOVPE  
Keyword(3) Si  
Keyword(4) C-implantation  
Keyword(5) SiC  
Keyword(6) nitridation  
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Keyword(8)  
1st Author's Name Myung Soo Cho  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Takahiro Kobayashi  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Naoki Sawazaki  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Akihiro Hashimoto  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
5th Author's Name Akio Yamamoto  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
6th Author's Name Yoshifumi Ito  
6th Author's Affiliation Wakasa-wan Energy Research Center (Wakasa-wan Energy Research Center)
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Speaker Author-1 
Date Time 2005-11-12 10:15:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2005-164 
Volume (vol) vol.105 
Number (no) no.394 
Page pp.13-16 
#Pages
Date of Issue 2005-11-05 (CPM) 


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