Paper Abstract and Keywords |
Presentation |
2005-11-12 10:15
MOVPE growth of high-quality InN on 3c-SiC/Si template Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) Link to ES Tech. Rep. Archives: CPM2005-164 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, We describe the comparison between MOVPE InN films grown on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) and on a sapphire in the same run. The nitridation of 3c-SiC/Si(111) template at 900ºC for 30min is employed just before the GaN buffer growth. A GaN buffer grown on the nitrided template is uniform, whereas a GaN buffer layer on an un-nitrided template shows island growth. The surface morphology of InN films grown on the nitrided template is similar to that for a film grown on a sapphire substrate. Electrical and optical properties of the InN film grown on the nitrided 3c-SiC/Si(111) template are also comparable to those for an InN film grown on sapphire. Thus, the nitridation of 3c-SiC/Si(111) template is effective to obtain high-quality InN film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InN / MOVPE / Si / C-implantation / SiC / nitridation / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 394, CPM2005-164, pp. 13-16, Nov. 2005. |
Paper # |
CPM2005-164 |
Date of Issue |
2005-11-05 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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Link to ES Tech. Rep. Archives: CPM2005-164 |
Conference Information |
Committee |
CPM |
Conference Date |
2005-11-11 - 2005-11-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2005-11-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MOVPE growth of high-quality InN on 3c-SiC/Si template |
Sub Title (in English) |
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Keyword(1) |
InN |
Keyword(2) |
MOVPE |
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Si |
Keyword(4) |
C-implantation |
Keyword(5) |
SiC |
Keyword(6) |
nitridation |
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1st Author's Name |
Myung Soo Cho |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Takahiro Kobayashi |
2nd Author's Affiliation |
University of Fukui (Univ. of Fukui) |
3rd Author's Name |
Naoki Sawazaki |
3rd Author's Affiliation |
University of Fukui (Univ. of Fukui) |
4th Author's Name |
Akihiro Hashimoto |
4th Author's Affiliation |
University of Fukui (Univ. of Fukui) |
5th Author's Name |
Akio Yamamoto |
5th Author's Affiliation |
University of Fukui (Univ. of Fukui) |
6th Author's Name |
Yoshifumi Ito |
6th Author's Affiliation |
Wakasa-wan Energy Research Center (Wakasa-wan Energy Research Center) |
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Speaker |
Author-1 |
Date Time |
2005-11-12 10:15:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2005-164 |
Volume (vol) |
vol.105 |
Number (no) |
no.394 |
Page |
pp.13-16 |
#Pages |
4 |
Date of Issue |
2005-11-05 (CPM) |