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| Presentation | 2005-11-11 15:10 Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) Link to ES Tech. Rep. Archives:  CPM2005-156 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The quality of SiC-MOS devices has been critically limited by carbon related defects in the SiC oxide film grown by thermal oxidation. In order to inhibit the carbon defects, the direct nitridation method was used to prepare an insulating layer on a SiC surface. The nitridation reaction was effectively enhanced by using RF plasma. The nitride layers with the thickness of several nm were detected by XPS measurements on the sample prepared at 1000$^\circ$C in N$_2$ plasma. The thickness of nitride layer increased with increasing reaction temperature up to 1000$^\circ$C, and then decreased with increasing temperature up to 1400$^\circ$C. The NH$_3$ plasma was effective to increase layer thickness as compared to the N$_2$ plasma. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / plasma / nitride film / MOS device / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 393, CPM2005-156, pp. 25-28, Nov. 2005. | |
| Paper # | CPM2005-156 | |
| Date of Issue | 2005-11-04 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: CPM2005-156 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2005-11-11 - 2005-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2005-11-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | plasma |
| Keyword(3) | nitride film |
| Keyword(4) | MOS device |
| Keyword(5) | |
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| 1st Author's Name | Tetsuo Yamaguchi |
| 1st Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 2nd Author's Name | YingShen Liu |
| 2nd Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 3rd Author's Name | Yoshiki Ishida |
| 3rd Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 4th Author's Name | Tomohiko Yamakami |
| 4th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 5th Author's Name | Rinpei Hayashibe |
| 5th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 6th Author's Name | Katsuya Abe |
| 6th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 7th Author's Name | Kiichi Kamimura |
| 7th Author's Affiliation | Shinshu University (Shinshu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2005-11-11 15:10:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2005-156 |
| Volume (vol) | vol.105 |
| Number (no) | no.393 |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2005-11-04 (CPM) |
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