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Paper Abstract and Keywords
Presentation 2005-11-11 14:45
Changes of surface structures during reactions of monomethylgermane on Si(001) -- Toward to fabrication of Ge embedded in SiC structure --
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) Link to ES Tech. Rep. Archives: CPM2005-155
Abstract (in Japanese) (See Japanese page) 
(in English) Initial stage of surface reactions between monomethylgermane (MMGe:
GeH$_3$CH$_3$) and Si(001) surfaces has been analyzed using reflective
high-energy electron diffraction (RHEED), scanning tunneling microscopy
(STM) and X-ray photoelectron spectroscopy (XPS). The reactions were
similar to those using monomethylsilane (MMS: SiH$_3$CH$_3$), that is,
c(4$\times$4) structure which may be caused by incorporation of carbon
atoms into the Si substrate appeared after a supply of molecules,
followed by SiC islands formation as the c(4$\times$4) disappeared.
At the same time, Ge related spots were observed near SiC twin spots on
the RHEED pattern. XPS revealed that Ge existed in the form of Ge or
SiGe on the surface layer without forming carbon clusters. Weak
photoluminescence (PL) peaks around 0.85eV and 0.95eV, which are
considered to originate from Ge nanodots, were observed.
Keyword (in Japanese) (See Japanese page) 
(in English) Surface reaction / Si(001) / c(4x4) / SiC / Ge / nano-structure / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 393, CPM2005-155, pp. 19-24, Nov. 2005.
Paper # CPM2005-155 
Date of Issue 2005-11-04 (CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF Link to ES Tech. Rep. Archives: CPM2005-155

Conference Information
Committee CPM  
Conference Date 2005-11-11 - 2005-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2005-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Changes of surface structures during reactions of monomethylgermane on Si(001) 
Sub Title (in English) Toward to fabrication of Ge embedded in SiC structure 
Keyword(1) Surface reaction  
Keyword(2) Si(001)  
Keyword(3) c(4x4)  
Keyword(4) SiC  
Keyword(5) Ge  
Keyword(6) nano-structure  
Keyword(7)  
Keyword(8)  
1st Author's Name Masayuki Harashima  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
2nd Author's Name Tetsushi Kanemaru  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
3rd Author's Name Ariyuki Kato  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
4th Author's Name Tomoaki Ogiwara  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
5th Author's Name Kanji Yasui  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
6th Author's Name Tadashi Akahane  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Technol.)
7th Author's Name Masasuke Takata  
7th Author's Affiliation Nagaoka Uoniversity f Technology (Nagaoka Univ. of Technol.)
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Speaker
Date Time 2005-11-11 14:45:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-CPM2005-155 
Volume (vol) IEICE-105 
Number (no) no.393 
Page pp.19-24 
#Pages IEICE-6 
Date of Issue IEICE-CPM-2005-11-04 


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