Paper Abstract and Keywords |
Presentation |
2005-10-13 16:20
Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors Tomoyuki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Masayuki Iwami (R&D Association for Future Electron Devices), Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.) Link to ES Tech. Rep. Archives: ED2005-134 CPM2005-121 LQE2005-61 |
Abstract |
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(in English) |
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Keyword |
(in Japanese) |
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(in English) |
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Reference Info. |
IEICE Tech. Rep., vol. 105, no. 325, ED2005-134, pp. 75-78, Oct. 2005. |
Paper # |
ED2005-134 |
Date of Issue |
2005-10-06 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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Link to ES Tech. Rep. Archives: ED2005-134 CPM2005-121 LQE2005-61 |
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