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| Presentation | 2005-08-19 10:00 [Special Invited Talk] HfSiON -- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue -- Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) Link to ES Tech. Rep. Archives:  SDM2005-146 ICD2005-85 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress the dramatic increase in the gate leakage current due to the quantum-mechanical tunneling through the ultra-thin SiON, new materials (high-k) has long been investigated. In this report, we describe the advantages of the Hf containing material, especially nitrided Hf-silicate as the thermally stable high-k gate dielectric. We also mention some issues left for its application to real LSIs as well. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOS / LSI / thermal stability / high permittivity / gate dielectric / phase separation / leakage current / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 233, SDM2005-146, pp. 19-24, Aug. 2005. | |
| Paper # | SDM2005-146 | |
| Date of Issue | 2005-08-12 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2005-146 ICD2005-85 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2005-08-18 - 2005-08-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | HAKODATE KOKUSAI HOTEL |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | VLSI Circuits, Device Technologies (High Speed, Low Voltage, Low Power), etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2005-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | HfSiON |
| Sub Title (in English) | its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue |
| Keyword(1) | MOS |
| Keyword(2) | LSI |
| Keyword(3) | thermal stability |
| Keyword(4) | high permittivity |
| Keyword(5) | gate dielectric |
| Keyword(6) | phase separation |
| Keyword(7) | leakage current |
| Keyword(8) | |
| 1st Author's Name | Akira Nishiyama |
| 1st Author's Affiliation | Toshiba Corporation (Toshiba) |
| 2nd Author's Name | Masato Koyama |
| 2nd Author's Affiliation | Toshiba Corporation (Toshiba) |
| 3rd Author's Name | Yuuichi Kamimuta |
| 3rd Author's Affiliation | Toshiba Corporation (Toshiba) |
| 4th Author's Name | Masahiro Koike |
| 4th Author's Affiliation | Toshiba Corporation (Toshiba) |
| 5th Author's Name | Ryosuke Iijima |
| 5th Author's Affiliation | Toshiba Corporation (Toshiba) |
| 6th Author's Name | Takeshi Yamaguchi |
| 6th Author's Affiliation | Toshiba Corporation (Toshiba) |
| 7th Author's Name | Masamichi Suzuki |
| 7th Author's Affiliation | Toshiba Corporation (Toshiba) |
| 8th Author's Name | Tsunehiro Ino |
| 8th Author's Affiliation | Toshiba Corporation (Toshiba) |
| 9th Author's Name | Mizuki Ono |
| 9th Author's Affiliation | Toshiba Corporation (Toshiba) |
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| Speaker | Author-1 |
| Date Time | 2005-08-19 10:00:00 |
| Presentation Time | 45 minutes |
| Registration for | SDM |
| Paper # | SDM2005-146, ICD2005-85 |
| Volume (vol) | vol.105 |
| Number (no) | no.233(SDM), no.235(ICD) |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2005-08-12 (SDM, ICD) |
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