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Paper Abstract and Keywords
Presentation 2005-06-24 11:05
Low threshold current operation of 1540nm wavelength GaInAsP/InP strain-compensated quantum-wire DFB lasers
Hideki Yagi, Koji Miura, Yoshifumi Nishimoto, Dhanorm Plumwongrot, Kazuya Ohira, Takeo Maruyama, Shigehisa Arai (Tokyo Tech.) Link to ES Tech. Rep. Archives: OPE2005-18 LQE2005-17
Abstract (in Japanese) (See Japanese page) 
(in English) GaInAsP/InP distributed feedback (DFB) lasers consisting of strain-compensated quantum-wire active regions (wire width of 24 nm, four-stacked quantum-wires) were realized by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth for the first time. A threshold current as low as 2.7 mA (threshold current density: 270 A/cm2) was attained for the stripe width of 3.0 μm and the cavity length of 330 μm under the room-temperature continuous-wave condition, which was attributed to a volume effect of the quantum-wire active region and moderately strong reflectivity of the DFB grating. From measurement of the lasing spectrum, single-mode operation with a sub-mode suppression ratio as high as 51 dB was observed in the lasing wavelength of 1541 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum-Wire Laser / DFB Laser / GaInAsP/InP / Strain-Compensated Quantum-Well / CH4/H2-RIE / OMVPE Regrowth / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 143, LQE2005-17, pp. 19-22, June 2005.
Paper # LQE2005-17 
Date of Issue 2005-06-17 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685
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Download PDF Link to ES Tech. Rep. Archives: OPE2005-18 LQE2005-17

Conference Information
Committee LQE OPE  
Conference Date 2005-06-24 - 2005-06-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Quantum Effect Optical Devices and Photonic Integrations (ES Summer Meeting of Materials and Devices) 
Paper Information
Registration To LQE 
Conference Code 2005-06-LQE-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low threshold current operation of 1540nm wavelength GaInAsP/InP strain-compensated quantum-wire DFB lasers 
Sub Title (in English)  
Keyword(1) Quantum-Wire Laser  
Keyword(2) DFB Laser  
Keyword(3) GaInAsP/InP  
Keyword(4) Strain-Compensated Quantum-Well  
Keyword(5) CH4/H2-RIE  
Keyword(6) OMVPE Regrowth  
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Keyword(8)  
1st Author's Name Hideki Yagi  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Koji Miura  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Yoshifumi Nishimoto  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Dhanorm Plumwongrot  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
5th Author's Name Kazuya Ohira  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
6th Author's Name Takeo Maruyama  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
7th Author's Name Shigehisa Arai  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2005-06-24 11:05:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2005-18, LQE2005-17 
Volume (vol) vol.105 
Number (no) no.142(OPE), no.143(LQE) 
Page pp.19-22 
#Pages
Date of Issue 2005-06-17 (OPE, LQE) 


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