Paper Abstract and Keywords |
Presentation |
2005-06-24 11:05
Low threshold current operation of 1540nm wavelength GaInAsP/InP strain-compensated quantum-wire DFB lasers Hideki Yagi, Koji Miura, Yoshifumi Nishimoto, Dhanorm Plumwongrot, Kazuya Ohira, Takeo Maruyama, Shigehisa Arai (Tokyo Tech.) Link to ES Tech. Rep. Archives: OPE2005-18 LQE2005-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaInAsP/InP distributed feedback (DFB) lasers consisting of strain-compensated quantum-wire active regions (wire width of 24 nm, four-stacked quantum-wires) were realized by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth for the first time. A threshold current as low as 2.7 mA (threshold current density: 270 A/cm2) was attained for the stripe width of 3.0 μm and the cavity length of 330 μm under the room-temperature continuous-wave condition, which was attributed to a volume effect of the quantum-wire active region and moderately strong reflectivity of the DFB grating. From measurement of the lasing spectrum, single-mode operation with a sub-mode suppression ratio as high as 51 dB was observed in the lasing wavelength of 1541 nm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum-Wire Laser / DFB Laser / GaInAsP/InP / Strain-Compensated Quantum-Well / CH4/H2-RIE / OMVPE Regrowth / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 143, LQE2005-17, pp. 19-22, June 2005. |
Paper # |
LQE2005-17 |
Date of Issue |
2005-06-17 (OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: OPE2005-18 LQE2005-17 |
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