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| Presentation | 2005-06-24 10:40 Anisotropic Gain of GaInAsP/InP Strained Quantum-Wire Laser Takeo Maruyama, Dhanorm Plumwongrot, Hideki Yagi, Koji Miura (Tokyo Tech, JST) Link to ES Tech. Rep. Archives:  OPE2005-17 LQE2005-16 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaInAsP/InP quantum-wire lasers consisting of strain-compensated quantum-wire active regions, laid on parallel and perpendicular to cavity direction, were fabricated by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. The threshold current of the quantum-wire laser laid on parallel to the cavity is two times higher than that of perpendicular to the cavity. It was found that the differential gain in parallel layout was approximately 5 times higher than that in perpendicular layout from gain spectral measurements by Hakki-Paoli method. Hence the anomalous lasing characteristics are attributed to this anisotropic gain property. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Quantum Wire Laser / Material Gain / GaInAsP/InP / Strain-Compensated Quantum-Well / CH_4/H_2-RIE / OMVPE Regrowth / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 143, LQE2005-16, pp. 15-18, June 2005. | |
| Paper # | LQE2005-16 | |
| Date of Issue | 2005-06-17 (OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: OPE2005-17 LQE2005-16 |
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| Conference Information | |
| Committee | LQE OPE |
| Conference Date | 2005-06-24 - 2005-06-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Quantum Effect Optical Devices and Photonic Integrations (ES Summer Meeting of Materials and Devices) |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2005-06-LQE-OPE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Anisotropic Gain of GaInAsP/InP Strained Quantum-Wire Laser |
| Sub Title (in English) | |
| Keyword(1) | Quantum Wire Laser |
| Keyword(2) | Material Gain |
| Keyword(3) | GaInAsP/InP |
| Keyword(4) | Strain-Compensated Quantum-Well |
| Keyword(5) | CH_4/H_2-RIE |
| Keyword(6) | OMVPE Regrowth |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takeo Maruyama |
| 1st Author's Affiliation | Tokyo Institute of Technology, JST (Tokyo Tech, JST) |
| 2nd Author's Name | Dhanorm Plumwongrot |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech, JST) |
| 3rd Author's Name | Hideki Yagi |
| 3rd Author's Affiliation | Tokyo Institute of Technology, JST (Tokyo Tech, JST) |
| 4th Author's Name | Koji Miura |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech, JST) |
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| Speaker | Author-1 |
| Date Time | 2005-06-24 10:40:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | OPE2005-17, LQE2005-16 |
| Volume (vol) | vol.105 |
| Number (no) | no.142(OPE), no.143(LQE) |
| Page | pp.15-18 |
| #Pages | 4 |
| Date of Issue | 2005-06-17 (OPE, LQE) |
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