Paper Abstract and Keywords |
Presentation |
2005-05-19 11:20
High-power low-chirp EAM-LD for 10Gbps-80km transmission Yasunori Miyazaki, Takeshi Yamatoya, Keisuke Matsumoto, Toshitaka Aoyagi, Takashi Nishimura (Mitsubishi Electric Corp.) Link to ES Tech. Rep. Archives: LQE2005-4 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present a 10Gbps electroabsorption modulator integrated laser diode (EAM-LD) with wavelength chirp reduced even under high optical output power conditions. Conventional EAM-LDs have suffered from high excessive chirp and deterioration of dispersion penalty under high optical output power conditions, which are due to the accumulation of photogenerated holes in quantum well (QW) absorption layer. In this paper, we show that a shallow QW absorption layer with a small valence band offset reduces a hole lifetime to 12ps and achieves low-chirp operation even under high optical output power conditions. Successful 10Gbps-80km transmission with the world-highest fiber launched average power of +4.8dBm and a dispersion penalty lower than 2dB is also demonstrated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Optical modulator / Laser diode / Quantum well / Optical fiber communication / transmission / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 52, LQE2005-4, pp. 13-16, May 2005. |
Paper # |
LQE2005-4 |
Date of Issue |
2005-05-12 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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