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Paper Abstract and Keywords
Presentation 2005-04-14 16:15
4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput
Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS) Link to ES Tech. Rep. Archives: ICD2005-11
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline technology, the bit-line pitch is reduced to 2 F, resulting in a 126 mm2 chip size and a 0.0162um2/bit cell size. To achieve 2-bits/cell, we have to precisely control the large resistance of the inversion-layer bit-line. In reading operations, two compensation methods, the address compensation and temperature compensation methods, were applied. In programming operations, charge-sharing scheme suppresses the difference in programming speeds along the string and self-boosting scheme reduces the time overhead of pre-charging bitlines. With these two schemes, a high programming throughput of 10 MB/s is achieved, even in multilevel flash memory. We have also provided a cache-read function to achieve a high access throughput of 22 MB/s.
Keyword (in Japanese) (See Japanese page) 
(in English) multilevel / flash memory / AG-AND-type / inversion-layer bit-line / self-boosting / charge-sharing / temperature conmensation / address compensation  
Reference Info. IEICE Tech. Rep., vol. 105, no. 1, ICD2005-11, pp. 53-58, April 2005.
Paper # ICD2005-11 
Date of Issue 2005-04-07 (ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Conference Information
Committee ICD  
Conference Date 2005-04-14 - 2005-04-15 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2005-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput 
Sub Title (in English)  
Keyword(1) multilevel  
Keyword(2) flash memory  
Keyword(3) AG-AND-type  
Keyword(4) inversion-layer bit-line  
Keyword(5) self-boosting  
Keyword(6) charge-sharing  
Keyword(7) temperature conmensation  
Keyword(8) address compensation  
1st Author's Name Hideaki Kurata  
1st Author's Affiliation Hitachi Ltd. (Hitachi)
2nd Author's Name Yoshitaka Sasago  
2nd Author's Affiliation Hitachi Ltd. (Hitachi)
3rd Author's Name Kazuo Otsuga  
3rd Author's Affiliation Hitachi Ltd. (Hitachi)
4th Author's Name Tsuyoshi Arigane  
4th Author's Affiliation Hitachi Ltd. (Hitachi)
5th Author's Name Tetsufumi Kawamura  
5th Author's Affiliation Hitachi Ltd. (Hitachi)
6th Author's Name Takashi Kobayashi  
6th Author's Affiliation Hitachi Ltd. (Hitachi)
7th Author's Name Hitoshi Kume  
7th Author's Affiliation Hitachi Ltd. (Hitachi)
8th Author's Name Kazuki Homma  
8th Author's Affiliation Renesas Technology Corp. (RENESAS)
9th Author's Name Kenji Kozakai  
9th Author's Affiliation Renesas Technology Corp. (RENESAS)
10th Author's Name Satoshi Noda  
10th Author's Affiliation Renesas Technology Corp. (RENESAS)
11th Author's Name Teruhiko Ito  
11th Author's Affiliation Renesas Technology Corp. (RENESAS)
12th Author's Name Masahiro Shimizu  
12th Author's Affiliation Renesas Technology Corp. (RENESAS)
13th Author's Name Yoshihiro Ikeda  
13th Author's Affiliation Renesas Technology Corp. (RENESAS)
14th Author's Name Osamu Tsuchiya  
14th Author's Affiliation Renesas Technology Corp. (RENESAS)
15th Author's Name Kazunori Furusawa  
15th Author's Affiliation Renesas Technology Corp. (RENESAS)
16th Author's Name  
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17th Author's Affiliation ()
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Speaker
Date Time 2005-04-14 16:15:00 
Presentation Time 30 
Registration for ICD 
Paper # IEICE-ICD2005-11 
Volume (vol) IEICE-105 
Number (no) no.1 
Page pp.53-58 
#Pages IEICE-6 
Date of Issue IEICE-ICD-2005-04-07 


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