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| Presentation | 2005-01-18 09:20 - Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) Link to ES Tech. Rep. Archives:  ED2004-212 MW2004-219 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state resistance are required. In addition, the device cost is one of the most important issues for GaN-based electron devices. To address these issues, we have developed a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables high packing density by eliminating the source interconnection and pad. The device has a high off-state breakdown voltage of 350 V, a very low specific on-state resistance of 1.9 mΩ・cm2 and a current handling capability of 150 A. A very high level of current (2.0 kA/cm2) transients, i.e. turn-on time of 98 psec and turn-off time of 96 psec, are successfully measured for the first time. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / Si substrate / high power switching device / low specific on-state resistance / high breakdown voltage / back-side field plate / / | |
| Reference Info. | IEICE Tech. Rep., vol. 104, no. 550, ED2004-212, pp. 1-5, Jan. 2005. | |
| Paper # | ED2004-212 | |
| Date of Issue | 2005-01-11 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2004-212 MW2004-219 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2005-01-17 - 2005-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2005-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | - |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Si substrate |
| Keyword(3) | high power switching device |
| Keyword(4) | low specific on-state resistance |
| Keyword(5) | high breakdown voltage |
| Keyword(6) | back-side field plate |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masahiro Hikita |
| 1st Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 2nd Author's Name | Manabu Yanagihara |
| 2nd Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 3rd Author's Name | Kazushi Nakazawa |
| 3rd Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 4th Author's Name | Hiroaki Ueno |
| 4th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 5th Author's Name | Yutaka Hirose |
| 5th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 6th Author's Name | Tetsuzo Ueda |
| 6th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 7th Author's Name | Yasuhiro Uemoto |
| 7th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 8th Author's Name | Tsuyoshi Tanaka |
| 8th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 9th Author's Name | Daisuke Ueda |
| 9th Author's Affiliation | Matsushita Electric Industrial Co.,Ltd. (Matsushita Electric) |
| 10th Author's Name | Takashi Egawa |
| 10th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2005-01-18 09:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2004-212, MW2004-219 |
| Volume (vol) | vol.104 |
| Number (no) | no.550(ED), no.552(MW) |
| Page | pp.1-5 |
| #Pages | 5 |
| Date of Issue | 2005-01-11 (ED, MW) |
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