Paper Abstract and Keywords |
Presentation |
2004-12-03 16:05
Dual Wavelength High Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly Technique Tomaoaki Tojo, Kazuhiko Yamanaka, Kazutoshi Onozawa, Brahm Pal Singh, Daisuke Ueda (MEI), Ikuo Soga, Koich Maezawa, Takashi Mizutani (Nagoya Univ.) Link to ES Tech. Rep. Archives: LQE2004-128 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed dual wavelength high power laser diodes (LDs) with a hybrid integrated solution, in which a 660 nm LD chip and a 780 nm LD chip are mounted side-by-side on a same substrate. In order to achieve the required mounting position accuracy, i.e., the interval of two emitting points within 110 ± 3 μm, we have developed a novel mounting technique called selective fluidic self-assembly. In this technique, bumps formed on the bonding surface of the LD chips and a substrate with recesses whose shapes are corresponding to the bumps are used for selective mounting. Dual wavelength LDs fabricated by this technique demonstrated the required positioning accuracy and high power operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
dual-wavelength / laser diode / hybrid integration / fluidic self-assembly / self-locking structure / selective mounting / / |
Reference Info. |
IEICE Tech. Rep., vol. 104, no. 484, LQE2004-128, pp. 55-58, Dec. 2004. |
Paper # |
LQE2004-128 |
Date of Issue |
2004-11-26 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: LQE2004-128 |
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