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| Presentation | 2004-12-03 16:30 Sudden failure analysis of InGaAs/GaAs strained-layer quantum-well lasers Tatsuya Takeshita, Mitsuru Sugo, Toru Sasaki, Yuichi Tohmori (NTT) Link to ES Tech. Rep. Archives:  LQE2004-129 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Sudden-failure mechanisms of InGaAs/GaAs strained-layer quantum-well lasers (LD) are analyzed by monitoring an optical-beam-induced current (OBIC). The sudden-failure LDs statistically have a different intensity profile of n-OBICridge (pn-junction OBIC under the ridge normalized by that under the electrode) from LDs with conventional catastrophic-optical damage (COD). It appears that dislocations are generated in the vicinity of AR facet and extend to the AR facet, and meltdown finally occurs there. Suppression of dislocation generation around the AR facet is important in preventing sudden failure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Semiconductor lasers / Quantum well lasers / Failure analysis / Reliability / Aging / Indium compounds / Ridge waveguides / Photon beams | |
| Reference Info. | IEICE Tech. Rep., vol. 104, no. 484, LQE2004-129, pp. 59-64, Dec. 2004. | |
| Paper # | LQE2004-129 | |
| Date of Issue | 2004-11-26 (LQE) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: LQE2004-129 |
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| Conference Information | |
| Committee | LQE |
| Conference Date | 2004-12-03 - 2004-12-03 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Lasers and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2004-12-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Sudden failure analysis of InGaAs/GaAs strained-layer quantum-well lasers |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor lasers |
| Keyword(2) | Quantum well lasers |
| Keyword(3) | Failure analysis |
| Keyword(4) | Reliability |
| Keyword(5) | Aging |
| Keyword(6) | Indium compounds |
| Keyword(7) | Ridge waveguides |
| Keyword(8) | Photon beams |
| 1st Author's Name | Tatsuya Takeshita |
| 1st Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 2nd Author's Name | Mitsuru Sugo |
| 2nd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 3rd Author's Name | Toru Sasaki |
| 3rd Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
| 4th Author's Name | Yuichi Tohmori |
| 4th Author's Affiliation | Nippon Telegraph and Telephone Corporation (NTT) |
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| Speaker | Author-1 |
| Date Time | 2004-12-03 16:30:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | LQE2004-129 |
| Volume (vol) | vol.104 |
| Number (no) | no.484 |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2004-11-26 (LQE) |
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