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2003 Asia-pacific Workshop on Fundamentals
and Applications of
Advanced Semiconductor Devices (AWAD2003)
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Technical Program
◆June 30 (Monday)◆
8:40 - 9:00
Opening Address : Kukjin Chun, SNU, Workshop Co-Chair
Takamoto Enoki, NTT, Worshop Co-Chair
Session 1 : Process and Materials for Silicon and Germanium-1
Session Co-Chairs : Jongho Lee, Kyungbuk National Univ.
E. Tokumitsu, Tokyo Institute of Technology, Tohoku Univ.
1.1 9:00 - 9:30
[Invited]
Front-End process Technology for sub-50nm CMOS and Beyond
Y. Tsunashima (Toshiba)
1.2 9:30 - 9:50
Junction Leakage Characteristics in Nitrogen Pile-up Oxide Wall Shallow Trench
Isolation
M. W. Lee, I. M. kang, D. S. Woo, B. Y. Choi, W. Y. Choi, J. D. Lee, and B. G.
Park (SNU)
1.3 9:50 - 10:10
Shallow Junction Formed by UV Laser Annealing for Si Micro-electronics
T. Noguchi (Sungkyunkwan Univ. and SAIT)
1.4 10:10 - 10:30
Fabrication of Low loss Transmission Line with Surface Micromaching Technology
H. S. Lee, S. C. Kim, B. O. Lim, K. M. Kim, W. Y. Uhm, Y. H. Chun, D. H. Shin,
H. C. Park, and J. K. Rhee (Dongguk Univ.)
1.5 10:30 - 10:50
Structure Analyses of Cu[100] Layer on Nb[100] Barrier Formed on SiO2
M. Maniruzzaman, M. Takeyama (Kitami Istitute of Tech.), Y. Hayasaka, E. Aoyagi,
T. Oshsuna (Tohoku Univ.), and A. Noya (Kitami Istitute of Tech.)
Coffee Break (10 min.)
Session 2 : Process and Materials for Silicon and Germanium-1
Session Co-Chairs : Sungmin Yoon, ETRI
S. Miyazaki, Hiroshima Univ.
2.1 11:00 - 11:30
[Invited]
High Performance Poly-silicon TFT by Excimer Laser Annealing
Min Koo Han (SNU)
2.2 11:30 - 11:50
Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics
of Poly-Si TFT
J. A. Ahn and O. H. Kim (Pohang Univ. of Sci. and Tech.)
2.3 11:50 - 12:10
Properties of LiNbO3 Thin Films Fabricated by CSD(Chemical Solution Decomposition)
Method
Y. S. Kim, S. W. Jung, S. H. Jeong, Y. I. In, K. H. Kim (Cheongju Univ.), K. S.
No (KAIST)
2.4 12:10 - 12:30
Local Characterization of Electronic Transport in Microcrystalline Germanium Thin
Films by Atomic Force Microscopy Using a Conducting Probe
K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, and S. Miyazaki (Hiroshima
Univ.)
Lunch ( 60 min.)
Session 3 : Silicon Devices and Circuits - 1
Session Co-Chairs : Kwangho Kim, Cheongju Univ.
Y. Tsunashima, Toshiba
3.1 13:30 - 14:00
[Invited]
Double-gate MOSFETs for Nano CMOS Technology -Body-tied Double-Gate MOSFETs-
J. H. Lee (Kyungbuk University), T. S. Park, and E. J. Yoon (SNU)
3.2 14:00 - 14:30
[Invited]
Potential of SOI devices in sub-100-nm Technology
Era Y. Omura (Kansai Univ.)
3.3 14:30 - 14:50
Reverse-Order Source/Drain with Double Offset Spacer(RODOS) for Sub-50nm Low-Power
and High-Speed MOSFET Design
W. Y. Choi, B. Y. Choi, D. S. Woo, J. D. Lee, and B. G. Park (SNU)
3.4 14:50 - 15:10
High Voltage MOS Devices with High Energy Implanted Buried Layer - Low Voltage
CMOS Process Comparable High Voltage MOS Devices -
P. S. Kwag, C. J. Ko, and O. K. Kwon (Hanyang Univ.)
3.5 14:50 - 15:10
Design of an IC-Card Interface Chipset with 3.3V / 5V DC-DC Converter
W. S. Oh, S. E. Lee, K. Y. Cho, J. W. Seo, and S. C. Lee (KETI)
Coffee Break (10 min.)
Session 4 : Compound Devices and Process Technologies - 1
Session Co-Chairs : Jindong Song, KIST
4.1 15:40 - 16:10
[Invited]
Ultra-high-speed InP-based HEMTs with Nanometer Gate technology
K. Shinohara (Communication Research Lab.)
4.2 16:10 - 16:30
Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs
for the Millimeter-wave Applications
M. S. Son, M. R. Kim, B. H. Lee and J. K. Rhee (Dongguk Univ.)
4.3 16:30 - 16:50
Optical Characteristics of InP/InGaAs HBTs
J. H. Park (Choon Hae College), K. D. Kim (Donga Univ.), Y. K. Kim (Geo Chang
Polytechnic College), M. T. Jung (Kyungnam College of Info. & Tech.) and J. K.
Song (Donga Univ.)
4.4 16:50 - 17:10
Bias Acceleration of Drain Resistance Increase in InP-based HEMTs and a Lifetime
Enhancement by Low Bias Design of Ics
Y. Fukai, S. Sugitani, T. Enoki, H. Kitabayashi, K. Murata, T. Makimura, Y. Yamane
and M. Muraguchi (NTT)
4.5 17:10 - 17:30
Simulation of Sub-0.1 um T-gate Trilayer Process in HEMTs for Millimeter-wave
Frequencies Using 50 kV and 100-kV Electron Beam Lithography System
M. S. Son and J. K. Rhee (Dongguk Univ.)
◆July 1 (Tuesday)◆
Session 5 : Compound Devices and Process Technologies - 1
Session Co-Chairs : MyungSik Son, Dongguk Univ.
5.1 8:30 - 9:00
[Invited]
Low Noise and Low Distortion Performance of AlGaN/GaN HFETs
Y. Hirose, Y. Ikeda, M. Ishii, T. Murata, K. Inoue, and T. Tanaka (Matsushita)
5.2 9:00 - 9:30
[Invited]
npn-Type Nitride Heterojunction Bipolar Transistor
T. Makimoto, K. Kumakura, and N. Kobayashi (NTT)
5.3 9:30 - 10:00
[Invited]
High Performance AlGaN/GaN HEMTs with Recessed Gate
Y. Sano (OKI)
5.4 10:00 - 10:20
100-mm Diameter AlGaN/GaN Epitaxial Wafers for HEMTs Grown on Sapphire Substrates
M. Miyoshi (Nagoya Institute of Technology, NGK Insulator, LTD.), S. Arulkumaran,
H. Ishikawa, T. Egawa, and T. Jimbo (Nagoya Inst. of Technology)
5.5 10:20 - 10:40
Effects of Device Passivation on AlGaN/GaN HEMT Using Electron Beam Evaporated
SiO2 and Si3N4
S. Arulkumaran, A. Imanishi, T. Egawa, H. Ishikawa, and T. Jimbo (Nagoya Inst.
of Technology)
Coffee Break (10 min.)
Session 6 : Silicon Devices and Circuits -2
Session Co-Chairs : Kieyoung Lee, Chungbuk Univ.
6.1 10:50 - 11:20
[Invited]
The Impact of nm CMOS Technology of Wireless Circuit and System
Kwyro Lee (KAIST)
6.2 11:20 - 11:40
Design of 12 Bit 500 MHz CMOS Current-mode DAC with Deglitch Circuit - Design
of Wide Bandwidth Digital to Analog Converter -
H. H. Cho and K. S. Yoon (Inha Univ.)
6.3 11:40 - 12:00
Monolithic VCOs with High Q MEMS Inductors for RF Applications
J. Y. Lee, J. H. Kim, S. S. Moon, I. H. Kim (SNU), Y. H. Lee, J. K. Yoon (Yonsei
Univ.), and K. Chun (SNU)
6.4 12:00 - 12:20
1/f Noise in Large Grain Poly-Si TFT's
I. K. Han, Y. J. Park, W. J. Choi, and J. I. Lee (KIST)
July 2 (Wednesday)
Session 7 : Nanoelectronics and Quantum Devices - 1
Session Co-Chairs : Taewan Kim, SAIT
7.1 8:30 - 9:00
[Invited]
Is Quantum Entanglement Invariant in Special Relativity?
D. Ahn (Univ. of Seoul) and S. W. Hwang (Korea Univ.)
7.2 9:00 - 9:30
[Invited]
Nitride Semiconductor Nanostructures and Their Optical Properties
H. J. Kim, H. S. Na, S. Y. Kwon, and E. J. Yoon (SNU)
7.3 9:30 - 9:50
Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected
by Raman and Photoemission Spectroscopy
Y. Darma and S. Miyazaki (Hiroshima Univ.)
7.4 9:50 - 10:10
Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating
Gate
T. Shibaguchi, Y. Shimizu, M. Ikeda, H. Murakami, and S. Miyazaki (Hiroshima Univ.)
7.5 10:10 - 10:30
Effect of Thermal Annealing on Optical and Structural Properties of 1.3 um Digital-alloy
InGaAlAs MQW
J. D. Song (KIST), J. M. Kim, S. J. Bae, Y. T. Lee (KJIST), P. Offermans, P. Koenraad,
and J. Wolter (Eindhoven Univ.)
Coffee Break (10 min.)
Session 8 : Nanoelectronics and Quantum Devices - 2
Session Co-Chairs : Euijoon Yoon, SNU
S. Tahara, NEC
8.1 10:40 - 11:00
A Simple Parameter Extraction Method for a Single Electron Transistor(SET)
B. H. Lee, M. J. Chen, and Y. H. Jeong (Pohang Univ. of Sci. and Tech.)
8.2 11:00 - 11:20
Experimental and Theoretical Analysis of Detection Wavelength Tuning in Quantum
Well Infrared-Photodeyector by Quantum Well Intermixing Technique
S. H. Hwang, J. C. Shin, W. J. Choi, I. K. Han, J. D. Song, J. I. Lee (KIST),
and H. Han (Pohang Univ. of Sci. and Tech.)
8.3 11:20 - 11:40
Structural and Optical Properties of InGaAs/GaAs Quantum Dots Using Atomic Layer
Epitaxy Technique for the Application of Optical Communication
J. D. Song, Y. M. Park, J. C. Shin, J. G. Lim, Y. J. Park, W. J. Choi, I. K. Han,
W. J. Cho, J. I. Lee (KIST), H. S. Lee, and J. Y. Lee (KAIST)
8.4 11:40 - 12:00
Carbon Nanotube FETs Fabricated on Patterened Metal Catalyst for Position Control
T. Mizutani, Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa,
and H. Shinohara (Nagoya Univ.)
8.5 12:00 - 12:20
Design and Implantation of Hexagonal Quantum BDD Logic Subsystems for Nanoprocessor
Arithmetic Logic Processing
S. Kasai, M. Yumoto, T. Tamura, and H. Hasegawa (Hokkaido Univ.)
Lunch ( 70 min.)
Session 9 : Future Device Technologies
Session Co-Chairs : Doyeol Ahn, Univ. of Seoul
T. Noguchi, Sungyunkwan Univ., SAIT
9.1 13:30 - 14:00
[Invited]
Issues for High Density MRAM
T. W. Kim, W. J. Park, I. H. Song, S. J. Park, Y. S. Kim, E. S. Kim, J. G. Lee
(SAIT), H. S. Jeong G. T. Jeong, G. T. Jeong, G. H. Koh, and K. N. Kim (Samsung)
9.2 14:00 - 14:30
[Invited]
Magnetic Random Access Memories
S. Tahara (NEC) and H. Yoda (Toshiba)
9.3 14:30 - 15:00
[Invited]
Status and Future of Emerging Nonvolatile Memories
Y. J. Park, S. S. Lee, K. N. Lee, C. S. Kim, I. W. Jang, H. B. Kang, K. H. Noh,
S. K. Hong, and J. H. Cho (Hynix)
9.4 15:00 - 15:20
Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi,La)4Ti3O12/HfO2
Structure
S. M. Yoon, I. K. You, S. O. Ryu, N. Y. Lee, S. M. Cho, K. D. Kim, W. C. Shin,
B. G. Yu (ETRI), K. J. Choi, and S. G. Yoon (Chungnam National Univ.)
9.5 15:20 - 15:40
Ferroelectric-Gate Structures Using Ferroelectric (Sm,Sr)Bi2Ta2O9 Films with Al2O3/Si3N4
Buffer Layer
E. Tokumitsu (Tohoku Univ./ Tokyo Institute of Technology), M. Kisahito, K. Izaki,
Y. Fujisaki, and H. Ishiwara (Tokyo Institute of Technology)
9.6 15:40 - 16:10
[Invited]
The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in Nano Era
Kinam Kim (Samsung)