Honorary Member

  Dr. Mimura graduated from the Department of Physics, the School of Science, Kwansei Gakuin University in 1967, completed the Master’s Program in Physics, the Graduate School of Engineering Science, Osaka University in 1970, and joined FUJITSU LIMITED in the same year. After that, he received a doctorate degree in engineering from Osaka University in 1982, was appointed as FUJITSU LABORATORIES Fellow in 1998 and FUJITSU LABORATORIES Honorary Fellow in 2017, where he still serves. Meanwhile, since 2006, he has been a visiting researcher at the Independent Administrative Agency National Institute of Information and Communications Technology (NICT) and a chief research fellow at the National Research and Development Agency National Institute of Information and Communications Technology, and has been instrumental in promoting open innovation.
  He has been engaged in research on semiconductor electronic devices and their industrial applications for many years, and has achieved many outstanding results. In particular, the High Electron Mobility Transistor (HEMT), which was invented in 1979, focuses on electrons with high mobility that generated when two types of semiconductors with different electron affinity are stacked, and it is a transistor with a new structure that controls the electron concentration by the field effect, and has a performance superior to conventional transistors in terms of high frequency, low noise, and low energy loss.
   Since this invention, he has played a leading role in research and development for the practical application of HEMT as a high frequency device and a high speed device. HEMT was first commercialized as a low-noise amplifier for radio telescopes in 1985, and made a major leap forward in radio astronomy by discovering unknown interstellar matter. Subsequently, it was used as a low-noise amplifier for satellite broadcasting receivers in consumer applications, and the parabolic antenna diameter could be significantly reduced, and it has contributed greatly to the explosive spread of satellite broadcasting in Japan and overseas and the globalization of information distribution. Since then, HEMT has been used in automobile collision prevention radar, global positioning system (GPS), mobile communication system, etc., and continues to contribute to the development of society as a key device that supports the infrastructure of the advanced information and communication society. In addition, toward the future increase in communication capacity and lower power consumption of equipment, HEMTs, which have excellent high-frequency characteristics and operate with low power loss, are expected to play an important role.
   In the process of research and development toward the practical application of HEMT, he recognized the importance of crystal growth technology and processing technology that can control the film thickness with the accuracy of atomic layer order from an early stage, and made efforts to promote research and development. These technologies are widely used not only as HEMTs but also as the basis for the subsequent development of compound semiconductor devices in general. In addition, in a form inspired by the progress of device technology centered on him, the understanding of the physics of semiconductor heterostructures is progressing, and it has had an enormous academic impact.
   These achievements have been highly evaluated both at home and abroad, and he has received the following awards: the IEICE Achievement Award, the IEICE Distinguished Achievement and Contributions Award, Invention Award of Japan Institute of Invention and Innovation, Purple Ribbon, Kyoto Prize (Advanced Technology) of INAMORI FOUNDATION, IEEE Morris Liebmann Memorial Award, Heinrich Welker Award at International Symposium on Compound Semiconductors, the JSAP Outstanding Achievement Award, etc. In addition to the IEICE, he has been awarded a Fellow title by the IEEE and the Japan Society of Applied Physics (JSAP).
  As mentioned above, his research achievements regarding semiconductor electronic devices and their industrial applications and their contributions to the field of electronic information and communication are extremely remarkable, and we recommend him as an Honorary Member of the IEICE.