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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, WPT 2018-04-27
14:50		 Tokyo Kikai-Shinko-Kaikan Building S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate
Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5		 A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] WPT2018-5 MW2018-5
pp.19-23
MW 2017-06-22
14:25		 Aichi A-101, Wing-A, Toyohashi University of Technology 2.4GHz band SOI-CMOS bridge rectifier IC
Seishu Yanagihara, Shunya Tsuchimoto, Kenji Itoh (KIT), Kengo Kawasaki, Tomohiro Yao, Masaomi Tsuru (Mitsubishi Electric Corp.) MW2017-22		  [more] MW2017-22
pp.5-8
MW 2013-12-20
13:55		 Saitama Saitama Univ. Frequency Characteristic of Power Efficiency for 2 GaN Band GaN HEMT Amplifier with Harmonic Reactive Termination
Tomohiro Yao, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2013-172		 For microwave power amplifiers, if higher-order harmonics are treated to increase efficiency by using any distributed tr... [more] MW2013-172
pp.115-120
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