Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2017-01-26 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In additio... [more] |
ED2016-96 MW2016-172 pp.1-5 |
EE, WPT (Joint) |
2016-10-06 16:25 |
Kyoto |
|
Drive-by-Microwave(DBM) technologies for power switching devices Songbek Che, Shuichi Nagai, Noboru Negoro, Yasufumi Kawai, Osamu Tabata, Yasuhiro Yamada, Hiroaki Ueno, Tetsuzo Ueda (Panasonic AIS) EE2016-23 WPT2016-29 |
(To be available after the conference date) [more] |
EE2016-23 WPT2016-29 pp.25-30(EE), pp.55-60(WPT) |
ED, LQE, CPM |
2015-11-26 14:25 |
Osaka |
Osaka City University Media Center |
A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] |
ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
SDM |
2015-11-06 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] |
SDM2015-90 pp.35-38 |
CPM, LQE, ED |
2013-11-29 16:40 |
Osaka |
|
Evaluation of unwanted radiated emission from GaN-HEMT switching circuit Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2013-89 CPM2013-148 LQE2013-124 |
The radiated emission from the GaN-HEMT switching converter is investigated by two-dimensional electromagnetic-probe sca... [more] |
ED2013-89 CPM2013-148 LQE2013-124 pp.117-120 |
MW, ED |
2013-01-18 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152 |
We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] |
ED2012-122 MW2012-152 pp.53-56 |
MW, ED |
2013-01-18 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154 |
Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] |
ED2012-124 MW2012-154 pp.63-68 |
ICD, SDM |
2012-08-03 10:05 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47 |
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] |
SDM2012-79 ICD2012-47 pp.89-92 |
SDM, ED (Workshop) |
2012-06-29 08:15 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Integrated Design Platform for Power Electronics Applications with GaN Devices Kenji Mizutani, Hiroaki Ueno, Yuji Kudoh, Shuichi Nagai, Kaoru Inoue, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
[more] |
|
ED, MW |
2012-01-12 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160 |
[more] |
ED2011-137 MW2011-160 pp.101-105 |
ED, MW |
2012-01-12 15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162 |
We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] |
ED2011-139 MW2011-162 pp.111-115 |
LQE, ED, CPM |
2011-11-17 16:05 |
Kyoto |
Katsura Hall,Kyoto Univ. |
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107 |
GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] |
ED2011-84 CPM2011-133 LQE2011-107 pp.55-60 |
CPM, SDM, ED |
2011-05-19 15:40 |
Aichi |
Nagoya Univ. (VBL) |
MOCVD growth of GaN on graphite substrates Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27 |
We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] |
ED2011-14 CPM2011-21 SDM2011-27 pp.67-70 |
MW, ED |
2011-01-14 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] |
ED2010-184 MW2010-144 pp.51-54 |
MW, ED |
2011-01-14 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-191 MW2010-151 |
We present a novel wafer-level-chip-size-package (WLCSP) technique with inverted microstrip line (IMSL) for mm-wave Si-C... [more] |
ED2010-191 MW2010-151 pp.87-90 |
ED |
2010-12-17 10:35 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
[Invited Talk]
GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167 |
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] |
ED2010-167 pp.53-58 |
MW, ED |
2009-01-14 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
GaN-based Natural Super Junction Diodes Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167 |
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] |
ED2008-202 MW2008-167 pp.23-27 |
MW, ED |
2009-01-16 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] |
ED2008-220 MW2008-185 pp.125-128 |
LQE, ED, CPM |
2008-11-28 15:20 |
Aichi |
Nagoya Institute of Technology |
Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) ED2008-181 CPM2008-130 LQE2008-125 |
(To be available after the conference date) [more] |
ED2008-181 CPM2008-130 LQE2008-125 pp.145-148 |
MW |
2008-08-28 14:20 |
Osaka |
Osaka-Univ. (Toyonaka) |
K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] |
MW2008-85 pp.37-40 |