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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2023-05-19
13:00		 Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)		 [Invited Talk] Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates
Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.) ED2023-1 CPM2023-1 SDM2023-18		 We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] ED2023-1 CPM2023-1 SDM2023-18
pp.1-6
ED, SDM 2017-02-24
10:50		 Hokkaido Centennial Hall, Hokkaido Univ. Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method
Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149		 Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.3... [more] ED2016-132 SDM2016-149
pp.13-16
ED, SDM 2016-03-03
14:00		 Hokkaido Centennial Hall, Hokkaido Univ. [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128		 We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] ED2015-121 SDM2015-128
pp.1-6
ED 2015-08-04
11:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Direct thermal-type gas sensor by P-type MgCr2O4-TiO2 ceramics
Jiro Terada, Sigeru Omatsu, Shigehiko Sasa, Mitsuaki Yano (O. I. T.) ED2015-52		 Using an element of two layers of structure that controlled the TiO2 content of p-type semiconductor of MgCr2O4-TiO2 cer... [more] ED2015-52
pp.41-45
SDM, ED 2013-02-27
16:05		 Hokkaido Hokkaido Univ. Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) ED2012-133 SDM2012-162		 We focus on Self Switching nano-Diodes (SSD) as a application for oxide semiconductors. The SSD is a novel functional na... [more] ED2012-133 SDM2012-162
pp.31-34
ED, MW 2010-01-14
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Development of high-performance ZnO-based FETs -- Device applications and microwave performance --
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.) ED2009-184 MW2009-167		 Zinc Oxide (ZnO) has various advantages over other wide gap semiconductors. In order to evaluate its material feasibilit... [more] ED2009-184 MW2009-167
pp.55-60
ED, SDM 2008-01-30
15:55		 Hokkaido   Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions
Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253		 The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We ... [more] ED2007-242 SDM2007-253
pp.29-32
SDM, ED 2007-02-02
11:05		 Hokkaido   Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) 		 [more] ED2006-252 SDM2006-240
pp.67-71
ED 2006-12-08
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves
Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. of Tech.) 		 [more]
 Results 1 - 9 of 9  /   
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