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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2015-12-03
10:50
Nagasaki Nagasaki Kinro Fukushi Kaikan [Invited Talk] Development of Via Structures in IC Package Substrates for Impedance Reduction
Tomoyuki Akaboshi, Taiga Fukumori, Daisuke Mizutani, Motoaki Tani (Fujitsu Lab.) CPM2015-136 ICD2015-61
This paper describes the impedance reduction technologies in build-up package substrates for high performance CPU, such ... [more] CPM2015-136 ICD2015-61
pp.51-54
SDM 2015-11-06
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL) SDM2015-91
 [more] SDM2015-91
pp.39-43
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2013-11-27
15:30
Kagoshima   [Invited Talk] Cu Wiring Technology for 3D/2.5D Packaging
Motoaki Tani, Yoshihiro Nakata, Tsuyoshi Kanki, Tomoji Nakamura (Fujitsu Lab.) VLD2013-75 CPM2013-119 ICD2013-96 CPSY2013-60 DC2013-41 RECONF2013-43
 [more] VLD2013-75 CPM2013-119 ICD2013-96 CPSY2013-60 DC2013-41 RECONF2013-43
pp.101-106(VLD), pp.63-68(CPM), pp.63-68(ICD), pp.9-14(CPSY), pp.101-106(DC), pp.21-26(RECONF)
SDM 2013-11-14
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride
Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics) SDM2013-103
 [more] SDM2013-103
pp.21-26
ED 2012-12-17
13:25
Miyagi Tohoku University 77 GHz-band High Power Amplifier Module using Redistribution Layer Technology
Masaru Sato, Yoshikatsu Ishizuki, Shinya Sasaki, Hiroshi Matsumura, Toshihide Suzuki, Motoaki Tani (Fujitsu Lab.) ED2012-94
We have developed a new packaging technology that enables the millimeter-wave power amplifier that can be employed in ap... [more] ED2012-94
pp.7-10
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2011-11-29
09:50
Miyazaki NewWelCity Miyazaki [Invited Talk] High-Density Wiring Technology for LSI Packages
Motoaki Tani, Shinya Sasaki (FUJITSU LAB.), Keisuke Uenishi (Osaka Univ.) CPM2011-155 ICD2011-87
We introduce high-density wiring technologies for LSI package substrates. For wiring fabrication on the dielectric layer... [more] CPM2011-155 ICD2011-87
pp.35-40
SDM, VLD 2007-10-30
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201
Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]
VLD2007-57 SDM2007-201
pp.33-36
SDM, VLD 2007-10-30
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203
We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
pp.43-46
SDM, VLD 2006-09-26
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas)
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. ... [more] VLD2006-41 SDM2006-162
pp.13-18
 Results 1 - 9 of 9  /   
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