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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-01-28
14:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions
Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia) SDM2019-84		 We develop strategies to maximize the performance and reliability of in-memory reinforcement learning with Hf1-xZrxO2 fe... [more] SDM2019-84
p.9
PRMU, IPSJ-CVIM, MVE [detail] 2014-01-23
09:30		 Osaka   Minimum Classification Error Training with Automatic Determination of Loss Smoothness Common to All Classes
Kensuke Ota (Doshisha Univ.), Hideyuki Watanabe (NICT), Shigeru Katagiri, Miho Ohsaki (Doshisha Univ.), Shigeki Matsuda, Chiori Hori (NICT) PRMU2013-91 MVE2013-32		 The smoothness of the smooth classification error count loss used in the Minimum Classification Error (MCE) training has... [more] PRMU2013-91 MVE2013-32
pp.1-6
SDM 2013-11-14
15:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors
Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) SDM2013-104		 We systematically study the channel size dependence of 1/f noise in silicon tri-gate nanowire transistors by measuring a... [more] SDM2013-104
pp.27-30
ICD, SDM 2012-08-02
13:50		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido 10nm-Diameter Tri-Gate Silicon Nanowire MOSFETs with Enhanced High-Field Transport and Vth Tunability through Thin BOX
Kensuke Ota, Masumi Saitoh, Chika Tanaka (Toshiba), Ken Uchida (TIT), Toshinori Numata (Toshiba) SDM2012-70 ICD2012-38		  [more] SDM2012-70 ICD2012-38
pp.37-42
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