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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SS | 2017-03-09 11:00 |
Okinawa | Akito Tanikado, Haruki Yokoyama, Soichi Sumi, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.)  SS2016-63 |
(To be available after the conference date) [more] | SS2016-63 pp.19-24 |
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| MSS, SS | 2017-01-27 16:30 |
Kyoto | Kyoto Institute of Technology | Evaluating Automated Program Repair using Metrics of Defects Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) MSS2016-79 SS2016-58 |
(To be available after the conference date) [more] | MSS2016-79 SS2016-58 pp.129-134 |
| SS | 2016-03-10 15:15 |
Okinawa | Investigation of Differences between Human-Written Patches and Automatically Generated Patches Hiroki Nakajima, Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) SS2015-87 |
(To be available after the conference date) [more] | SS2015-87 pp.67-72 |
|
| SS | 2016-03-10 16:05 |
Okinawa | Reducing Reuse Candidates on Reuse-Based Automated Program Repair Using "Freshness" Masahiro Yamamoto, Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.) SS2015-89 |
(To be available after the conference date) [more] | SS2015-89 pp.79-84 |
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| LQE, OPE | 2015-06-19 16:15 |
Tokyo | High-linearity avalanche photodiode and its application for 28Gbaud PAM4 operation Masahiro Nada, Takuya Hoshi, Hirofumi Yamazaki, Haruki Yokoyama, Toshikazu Hashimoto, Hideaki Matsuzaki (NTT) OPE2015-19 LQE2015-29 |
We present a unique configuration of high-speed avalanche photodiode (APD) for ensuring high linearity. The APD exhibits... [more] | OPE2015-19 LQE2015-29 pp.43-46 |
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| SS | 2015-05-12 09:15 |
Kumamoto | Kumamoto University | Investigation for Reducing Reuse Candidates on Reuse-based Automated Program Repair Haruki Yokoyama, Takafumi Ohta, Keisuke Hotta, Yoshiki Higo (Osaka Univ.), Kozo Okano (Shinshu Univ.), Shinji Kusumoto (Osaka Univ.) SS2015-10 |
(To be available after the conference date) [more] | SS2015-10 pp.47-52 |
| LQE, ED, CPM | 2014-11-28 15:10 |
Osaka | Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122 |
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] | ED2014-94 CPM2014-151 LQE2014-122 pp.103-106 |
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| EMD, LQE, OPE, CPM, R | 2014-08-22 11:30 |
Hokkaido | Otaru Economy Center | High-speed avalanche photodiodes with vertical illumination structure for reliability and stability Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, Hideaki Matsuzaki (NTT) R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45 |
[more] | R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45 pp.91-94 |
| CPM, LQE, ED | 2013-11-28 14:20 |
Osaka | Investigation on the optimum MQW structure for InGaN/GaN solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105 |
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] | ED2013-70 CPM2013-129 LQE2013-105 pp.31-34 |
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| LQE, OCS, OPE | 2013-10-25 11:15 |
Fukuoka | High-performance InAlAs avalanche photodiode for 25-Gbit/s applications Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85 |
[more] | OCS2013-69 OPE2013-115 LQE2013-85 pp.99-102 |
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| ED, LQE, CPM | 2012-11-29 13:30 |
Osaka | Osaka City University | Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98 |
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] | ED2012-70 CPM2012-127 LQE2012-98 pp.21-24 |
| EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] | 2012-01-27 14:40 |
Osaka | Osaka Univ. Convention Center | Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform Yu Kurata, Yusuke Nasu, Munehisa Tamura, Yoshifumi Muramoto, Haruki Yokoyama (NTT) PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93 |
We proposed the heterogeneous integration of high-speed InP PDs on a silica-based PLC platform. A high-speed photo-detec... [more] | PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93 pp.299-304 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-28 10:50 |
Osaka | Osaka Univ. | High-gain operation of avalanche photodiodes with InP/InGaAs new structures Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142 |
Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside... [more] | PN2010-44 OPE2010-157 LQE2010-142 pp.103-106 |
| ED | 2010-12-16 14:10 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] | ED2010-159 pp.7-12 |
| ED, SDM | 2010-06-30 16:10 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] | ED2010-61 SDM2010-62 pp.47-48 |
| OPE, LQE | 2010-06-25 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Composite Field MIC-PD for Low Bias and High Input Power Operation Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18 |
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] | OPE2010-16 LQE2010-18 pp.7-10 |
| ED | 2009-11-30 09:00 |
Osaka | Osaka Science & Technology Center | Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] | ED2009-166 pp.37-40 |
| ED | 2007-06-15 16:15 |
Toyama | Toyama Univ. | MOVPE growth of high-quality InP-based resonant tunneling diodes Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38 |
InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organ... [more] | ED2007-38 pp.39-43 |
| MW, ED | 2007-01-19 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT) |
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] | ED2006-233 MW2006-186 pp.183-187 |
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