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Technical Committee on Microwaves (MW) (Searched in: 2008)
Search Results: Keywords 'place:Kikai-Shinko-Kaikan Bldg'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2009-01-14 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Evaluation of reverse conduction GaN FET Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.)  ED2008-203 MW2008-168 |
We fabricated reverse conduction (RC) GaN FETs which monolithically integrated normally-off mode GaN FET and GaN SBD. Tw... [more] | ED2008-203 MW2008-168 pp.29-34 |
| MW, ED | 2009-01-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.) ED2008-204 MW2008-169 |
This paper reports the demonstration of the resonant inverter circuit for electrodeless fluorescent lamps using a high-v... [more] | ED2008-204 MW2008-169 pp.35-40 |
| MW, ED | 2009-01-15 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of Temperature Distribution of a Heated Material Placed in a Microwave Oven
-- Considering the Change of Electric Permittivity by Temperature Rise -- Masaki Karakawa, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.) ED2008-205 MW2008-170 |
[more] | ED2008-205 MW2008-170 pp.41-46 |
| MW, ED | 2009-01-15 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Improvement of the Stopband Characteristics of Banpass Filters Using Microstrip Composite Shunt Resonators Takanori Tozawa, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.) ED2008-206 MW2008-171 |
In this paper, a novel microstrip bandpass filter (BPF) with sharp attenuations and wide stopband is developed through a... [more] | ED2008-206 MW2008-171 pp.47-52 |
| MW, ED | 2009-01-15 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of A Microstrip Parallel-Coupled Dual-Mode Ring Resonator and Its Application to the Design of Filters Hideyuki Sasaki, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan.), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.) ED2008-207 MW2008-172 |
By using the even-odd mode method, a micostrip parallel-coupled dual-mode square ring resonator is analyzed based on its... [more] | ED2008-207 MW2008-172 pp.53-58 |
| MW, ED | 2009-01-15 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Submillimeter Wave Nonreciprocal Propagation Characteristics of a Coupled Line Containing Solid-State Plasma Material Kei Maruyama, Tetsuo Obunai, Shinichi Yodokawa, Satoru Kousaka (Akita Univ.) ED2008-208 MW2008-173 |
Submillimeter wave nonreciprocal propagation characteristics of a coupled line containing solid-state magnetoplasma mate... [more] | ED2008-208 MW2008-173 pp.59-64 |
| MW, ED | 2009-01-15 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.) ED2008-209 MW2008-174 |
We have fabricated and evaluated attenuation characteristics of coplanar waveguide (CPW) on high-resisitivity silicon su... [more] | ED2008-209 MW2008-174 pp.65-70 |
| MW, ED | 2009-01-15 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.) ED2008-210 MW2008-175 |
This paper describes circuit design and measurement results of a phase-shifter built-in spiral directional coupler and i... [more] | ED2008-210 MW2008-175 pp.71-76 |
| MW, ED | 2009-01-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2008-211 MW2008-176 |
InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scali... [more] | ED2008-211 MW2008-176 pp.77-81 |
| MW, ED | 2009-01-15 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2008-212 MW2008-177 |
Abstract We report a Monte Carlo analysis of base transit time in ultra-thin and heavily-doped InP/InGaAs HBT’s. In ultr... [more] | ED2008-212 MW2008-177 pp.83-88 |
| MW, ED | 2009-01-15 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT) ED2008-213 MW2008-178 |
We have developed a two-channel automatic-gain-control transimpedance amplifier IC by using InP heterojunction bipolar t... [more] | ED2008-213 MW2008-178 pp.89-94 |
| MW, ED | 2009-01-15 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2008-214 MW2008-179 pp.95-99 |
| MW, ED | 2009-01-15 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Characteristics on Primary Radiator Fed by Coaxial Cable at 60GHz Makoto Okiyokota, Motonori Nakamura, Futoshi Kuroki (Inst. of National College of Tech.) ED2008-215 MW2008-180 |
A primary radiator fed by a coaxial cable for offset parabolic reflectors was investigated for millimeter-wave planar an... [more] | ED2008-215 MW2008-180 pp.101-104 |
| MW, ED | 2009-01-15 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Experimental Study on Bilaterally Metal-loaded Tri-plate Transmission Line at Millimeter-wavelengths Ryo-ji Tamaru, Futoshi Kuroki (Kure Nat'l Coll of Tech) ED2008-216 MW2008-181 |
Since surfaces of dielectric substrates for printed boards are usually roughened to make tight copper-coating, it was fo... [more] | ED2008-216 MW2008-181 pp.105-108 |
| MW, ED | 2009-01-15 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Report on the China-Japan Joint Microwave Conference 2008 Futoshi Kuroki (Kure Nat'l Coll of Tech) ED2008-217 MW2008-182 |
[more] | ED2008-217 MW2008-182 pp.109-112 |
| MW, ED | 2009-01-16 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 |
[more] | ED2008-218 MW2008-183 pp.113-118 |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| MW, ED | 2009-01-16 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] | ED2008-220 MW2008-185 pp.125-128 |
| MW, ED | 2009-01-16 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] | ED2008-221 MW2008-186 pp.129-133 |
| MW, ED | 2009-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications) ED2008-222 MW2008-187 |
This paper describes a high-efficiency Class-F GaN HEMT power amplifier linearized by a diode predistorter. The series d... [more] | ED2008-222 MW2008-187 pp.135-139 |
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