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Technical Committee on Electronic Information Displays (EID) (Searched in: 2014)
Search Results: Keywords 'from:2014-12-12 to:2014-12-12'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2014-12-12 16:15 |
Kyoto | Kyoto University | Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)  EID2014-33 SDM2014-128 |
Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range ... [more] | EID2014-33 SDM2014-128 pp.103-107 |
| SDM, EID | 2014-12-12 16:30 |
Kyoto | Kyoto University | Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129 |
SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interfa... [more] | EID2014-34 SDM2014-129 pp.109-113 |
| SDM, EID | 2014-12-12 16:45 |
Kyoto | Kyoto University | Temperature Dependence of Current Gain in 4H-SiC BJTs Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2014-35 SDM2014-130 |
Temperature dependence of current gain from 140 to 460 K in a 4H-SiC bipolar junction transistor (SiC BJT) was investiga... [more] | EID2014-35 SDM2014-130 pp.115-118 |
| SDM, EID | 2014-12-12 17:00 |
Kyoto | Kyoto University | Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-36 SDM2014-131 |
In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power ... [more] | EID2014-36 SDM2014-131 pp.119-123 |
| SDM, EID | 2014-12-12 17:15 |
Kyoto | Kyoto University | Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132 |
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] | EID2014-37 SDM2014-132 pp.125-128 |
| SDM, EID | 2014-12-12 17:30 |
Kyoto | Kyoto University | Resistive switching characteristics of NiO-based ReRAM after semi-forming process. Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133 |
In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] | EID2014-38 SDM2014-133 pp.129-134 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
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