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Technical Committee on Electronic Information Displays (EID)  (Searched in: 2014)

Search Results: Keywords 'from:2014-12-12 to:2014-12-12'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 27  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
10:00
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
SDM, EID 2014-12-12
10:15
Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
pp.7-11
SDM, EID 2014-12-12
10:30
Kyoto Kyoto University Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) EID2014-15 SDM2014-110
 [more] EID2014-15 SDM2014-110
pp.13-16
SDM, EID 2014-12-12
10:45
Kyoto Kyoto University Conduction mechanism and Charge retention mechanism for DNA memory transistor
Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ) EID2014-16 SDM2014-111
 [more] EID2014-16 SDM2014-111
pp.17-20
SDM, EID 2014-12-12
11:00
Kyoto Kyoto University Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112
Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] EID2014-17 SDM2014-112
pp.21-24
SDM, EID 2014-12-12
11:15
Kyoto Kyoto University Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity
Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST) EID2014-18 SDM2014-113
Electroluminescence imaging method (EL method) is extensively investigated since crystal defects and process induced fau... [more] EID2014-18 SDM2014-113
pp.25-29
SDM, EID 2014-12-12
11:30
Kyoto Kyoto University Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell
Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST) EID2014-19 SDM2014-114
In case of the laser process with BSG (Boron Silicate Glass) as the doping precursor, we have the problem about the amou... [more] EID2014-19 SDM2014-114
pp.31-35
SDM, EID 2014-12-12
11:45
Kyoto Kyoto University Micro-Wall Solar Cell with Electric-Field Effect
Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo) EID2014-20 SDM2014-115
 [more] EID2014-20 SDM2014-115
pp.37-40
SDM, EID 2014-12-12
13:00
Kyoto Kyoto University Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs
Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2014-21 SDM2014-116
We have evaluated photoconductivities of n-ch, p-ch, and pin-ch poly-Si TFPTs for photosensor application. It was observ... [more] EID2014-21 SDM2014-116
pp.41-44
SDM, EID 2014-12-12
13:15
Kyoto Kyoto University Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors
Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-22 SDM2014-117
We have compared illuminance dependence of output frequency for frequency modulation type photo sensors using N-type &#6... [more] EID2014-22 SDM2014-117
pp.45-50
SDM, EID 2014-12-12
13:30
Kyoto Kyoto University Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] EID2014-23 SDM2014-118
pp.51-54
SDM, EID 2014-12-12
13:45
Kyoto Kyoto University Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-24 SDM2014-119
We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si ... [more] EID2014-24 SDM2014-119
pp.55-59
SDM, EID 2014-12-12
14:00
Kyoto Kyoto University Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] EID2014-25 SDM2014-120
pp.61-65
SDM, EID 2014-12-12
14:15
Kyoto Kyoto University Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing
Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] EID2014-26 SDM2014-121
pp.67-71
SDM, EID 2014-12-12
14:30
Kyoto Kyoto University Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device
Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan) EID2014-27 SDM2014-122
 [more] EID2014-27 SDM2014-122
pp.73-77
SDM, EID 2014-12-12
14:45
Kyoto Kyoto University Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] EID2014-28 SDM2014-123
pp.79-82
SDM, EID 2014-12-12
15:00
Kyoto Kyoto University Effect of deposition conditions on the properties of IGZO thin film
Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-29 SDM2014-124
 [more] EID2014-29 SDM2014-124
pp.83-87
SDM, EID 2014-12-12
15:15
Kyoto Kyoto University Characterization of the touch panel circuit using ITZO TFTs
Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.) EID2014-30 SDM2014-125
Oxide TFTs using ITZO for the active layer (ITZO TFTs) have attracted attention as a driving element of flatpanel displ... [more] EID2014-30 SDM2014-125
pp.89-93
SDM, EID 2014-12-12
15:45
Kyoto Kyoto University Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control
Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.) EID2014-31 SDM2014-126
Silicon (Si) is not only the basis of electronic devices, but also established as a basic material of various devices, e... [more] EID2014-31 SDM2014-126
pp.95-98
SDM, EID 2014-12-12
16:00
Kyoto Kyoto University Formation of nc-Si in SiOx by Soft X-ray Irradiation
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127
 [more] EID2014-32 SDM2014-127
pp.99-102
 Results 1 - 20 of 27  /  [Next]  
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