Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, EID |
2014-12-12 10:00 |
Kyoto |
Kyoto University |
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108 |
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] |
EID2014-13 SDM2014-108 pp.1-6 |
SDM, EID |
2014-12-12 10:15 |
Kyoto |
Kyoto University |
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] |
EID2014-14 SDM2014-109 pp.7-11 |
SDM, EID |
2014-12-12 10:30 |
Kyoto |
Kyoto University |
Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) EID2014-15 SDM2014-110 |
[more] |
EID2014-15 SDM2014-110 pp.13-16 |
SDM, EID |
2014-12-12 10:45 |
Kyoto |
Kyoto University |
Conduction mechanism and Charge retention mechanism for DNA memory transistor Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ) EID2014-16 SDM2014-111 |
[more] |
EID2014-16 SDM2014-111 pp.17-20 |
SDM, EID |
2014-12-12 11:00 |
Kyoto |
Kyoto University |
Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112 |
Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] |
EID2014-17 SDM2014-112 pp.21-24 |
SDM, EID |
2014-12-12 11:15 |
Kyoto |
Kyoto University |
Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST) EID2014-18 SDM2014-113 |
Electroluminescence imaging method (EL method) is extensively investigated since crystal defects and process induced fau... [more] |
EID2014-18 SDM2014-113 pp.25-29 |
SDM, EID |
2014-12-12 11:30 |
Kyoto |
Kyoto University |
Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST) EID2014-19 SDM2014-114 |
In case of the laser process with BSG (Boron Silicate Glass) as the doping precursor, we have the problem about the amou... [more] |
EID2014-19 SDM2014-114 pp.31-35 |
SDM, EID |
2014-12-12 11:45 |
Kyoto |
Kyoto University |
Micro-Wall Solar Cell with Electric-Field Effect Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo) EID2014-20 SDM2014-115 |
[more] |
EID2014-20 SDM2014-115 pp.37-40 |
SDM, EID |
2014-12-12 13:00 |
Kyoto |
Kyoto University |
Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2014-21 SDM2014-116 |
We have evaluated photoconductivities of n-ch, p-ch, and pin-ch poly-Si TFPTs for photosensor application. It was observ... [more] |
EID2014-21 SDM2014-116 pp.41-44 |
SDM, EID |
2014-12-12 13:15 |
Kyoto |
Kyoto University |
Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-22 SDM2014-117 |
We have compared illuminance dependence of output frequency for frequency modulation type photo sensors using N-type ... [more] |
EID2014-22 SDM2014-117 pp.45-50 |
SDM, EID |
2014-12-12 13:30 |
Kyoto |
Kyoto University |
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] |
EID2014-23 SDM2014-118 pp.51-54 |
SDM, EID |
2014-12-12 13:45 |
Kyoto |
Kyoto University |
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-24 SDM2014-119 |
We are executing research and development of temperature sensors using temperature dependence of off-current of poly-Si ... [more] |
EID2014-24 SDM2014-119 pp.55-59 |
SDM, EID |
2014-12-12 14:00 |
Kyoto |
Kyoto University |
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) EID2014-25 SDM2014-120 |
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the ou... [more] |
EID2014-25 SDM2014-120 pp.61-65 |
SDM, EID |
2014-12-12 14:15 |
Kyoto |
Kyoto University |
Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] |
EID2014-26 SDM2014-121 pp.67-71 |
SDM, EID |
2014-12-12 14:30 |
Kyoto |
Kyoto University |
Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan) EID2014-27 SDM2014-122 |
[more] |
EID2014-27 SDM2014-122 pp.73-77 |
SDM, EID |
2014-12-12 14:45 |
Kyoto |
Kyoto University |
Characteristics of Ga-Sn-Oxide thin film Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123 |
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] |
EID2014-28 SDM2014-123 pp.79-82 |
SDM, EID |
2014-12-12 15:00 |
Kyoto |
Kyoto University |
Effect of deposition conditions on the properties of IGZO thin film Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-29 SDM2014-124 |
[more] |
EID2014-29 SDM2014-124 pp.83-87 |
SDM, EID |
2014-12-12 15:15 |
Kyoto |
Kyoto University |
Characterization of the touch panel circuit using ITZO TFTs Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.) EID2014-30 SDM2014-125 |
Oxide TFTs using ITZO for the active layer (ITZO TFTs) have attracted attention as a driving element of flatpanel displ... [more] |
EID2014-30 SDM2014-125 pp.89-93 |
SDM, EID |
2014-12-12 15:45 |
Kyoto |
Kyoto University |
Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.) EID2014-31 SDM2014-126 |
Silicon (Si) is not only the basis of electronic devices, but also established as a basic material of various devices, e... [more] |
EID2014-31 SDM2014-126 pp.95-98 |
SDM, EID |
2014-12-12 16:00 |
Kyoto |
Kyoto University |
Formation of nc-Si in SiOx by Soft X-ray Irradiation Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127 |
[more] |
EID2014-32 SDM2014-127 pp.99-102 |