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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, SDM, ITE-IDY [detail] 2020-12-02
15:00		 Online Online Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes.
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45		 In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] EID2020-11 SDM2020-45
pp.42-45
MW, ED 2005-11-17
14:00		 Saga   A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications
Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) 		A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] ED2005-166 MW2005-121
pp.45-49
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