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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, EMCJ, EST, IEE-EMC [detail] | 2017-10-20 11:05 |
Akita | Yupopo | 5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer Koji Yamanaka, Kazuhiro Iyomasa, Masatake Hangai, Hiromitsu Utsumi, Jun Nishihara, Yukihiro Homma (Mitsubishi Electric), Kenji Sakaki (J-SS)  EMCJ2017-47 MW2017-99 EST2017-62 |
In this paper, a state-of-the-art high power and high efficiency GaN HEMT amplifier, which is to be used in 5.8GHz micro... [more] | EMCJ2017-47 MW2017-99 EST2017-62 pp.117-122 |
| MW, ED | 2013-01-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] | ED2012-121 MW2012-151 pp.49-52 |
| MW | 2012-06-29 14:00 |
Gifu | Gifu Univ. | C-band 220W High Efficiency GaN Amplifier Hiroaki Maehara, Koji Yamanaka, Naoki Kosaka, Jun Nishihara, Keiichi Kawashima, Masatoshi Nakayama (Mitsubishi Electric) MW2012-22 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. Recen... [more] | MW2012-22 pp.19-24 |
| MW | 2012-03-01 13:45 |
Saga | Saga University | How to improve efficiency of over 100W output power GaN High Power Amplifiers using Harmonic Termination Technique Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) MW2011-175 |
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at S-band is presented. Recen... [more] | MW2011-175 pp.41-46 |
| EMCJ, MW, EST | 2011-05-26 14:35 |
Tokyo | NICT | L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) EMCJ2011-17 MW2011-14 EST2011-10 |
In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Re... [more] | EMCJ2011-17 MW2011-14 EST2011-10 pp.45-50 |
| MW, ED | 2011-01-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Broadband High Efficiency Class-E GaN HEMT Amplifier Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) ED2010-179 MW2010-139 |
In this paper, a broadband high efficiency class-E GaN HEMT amplifier is presented. Recently, many over 100W output powe... [more] | ED2010-179 MW2010-139 pp.23-28 |
| MW | 2008-08-28 13:45 |
Osaka | Osaka-Univ. (Toyonaka) | S-band GaN HEMT Low Noise Amplifier with High Survivability Koji Yamanaka, Hidenori Yukawa, Akira Inoue (Mitsubishi Electric) MW2008-84 |
In this paper, an S-band GaN HEMT LNA, which uses a small discrete GaN HEMT chip to minimize the cost, is presented. It ... [more] | MW2008-84 pp.31-36 |
| MW | 2008-06-27 14:50 |
Aichi | Toyohashi Univ. of Tech. | Efficiency Enhancement of GaN HEMTs with Harmonic Tuning Technique Koji Yamanaka, Hifumi Noto, Makoto Kimura, Kazuhisa Yamauchi, Yoshitaka Kamo, Eigo Kuwata, Hiroshi Otsuka, Akira Inoue (Mitsubishi Electric) MW2008-44 |
In this paper, high efficiency operation of GaN HEMTs with harmonic tuning is presented. As power density of GaN HEMTs i... [more] | MW2008-44 pp.69-74 |
| SCE, MW | 2008-04-22 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN HEMT broadband high efficiency amplifier Koji Yamanaka, Hiroshi Otsuka, Yoshinori Tsuyama, Shin Chaki, Akira Inoue (Mitsubishi Electric Corp.) SCE2008-10 MW2008-10 |
In this paper, circuit technologies for GaN HEMT broadband high efficiency amplifiers are presented. Cat-CVD technique e... [more] | SCE2008-10 MW2008-10 pp.53-58 |
| ED, MW | 2008-01-16 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | C-band High Efficiency GaN HEMT Power Amplifiers Koji Yamanaka, Hiroshi Otsuka, Kazutomi Mori, Hifumi Noto (Mitsubishi Elec. Corp.) ED2007-210 MW2007-141 |
In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Cat-CVD technique and cell division con... [more] | ED2007-210 MW2007-141 pp.23-28 |
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