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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-24
10:05
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties
Taichi Fujikawa, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) ED2022-24 CPM2022-49 LQE2022-57
PEDOT:PSS/ZnO nanorods (NRs)/GZO heterojunction UV light detectors with the ZnO NRs layers grown from the CBD solutions ... [more] ED2022-24 CPM2022-49 LQE2022-57
pp.1-4
MWP 2021-05-26
17:25
Online Online Measurement of frequency characteristic in photodetectors using two-tone signals and estimation of non-linearity in photodetectors for wide-band signals
Yuta Maeda, Nonoka Maniwa, Yuki Seto, Ryoga Kawabata (Waseda Univ.), Keizo Inagaki (NICT), Tetsuya Kawanishi (Waseda Univ.) MWP2021-7
In wideband radio systems, radio-over-fiber would play important roles in simplification of the system. In a fiber wirel... [more] MWP2021-7
pp.29-33
LQE, OCS, OPE 2019-05-13
16:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Invited Talk] Phase-retrieving Coherent Detection by a High-speed Photodetector Array
Yuki Yoshida, Toshimasa Umezawa, Atsushi Kanno, Naokatsu Yamamoto (NICT) OCS2019-8 OPE2019-8 LQE2019-8
A novel coherent detection technique based on phase retrieval is introduced. A 2-D arrayed photodetector with a novel di... [more] OCS2019-8 OPE2019-8 LQE2019-8
pp.29-34
OCS, OPE, LQE 2017-10-27
09:30
Kumamoto Josaien, Sakuranobaba Design and Sensitivity Analysis of 4-Port InP Stokes Vector Receiver
Takahiro Suganuma, Yoshiaki Nakano, Takuo Tanemura (The Univ. of Tokyo) OCS2017-47 OPE2017-79 LQE2017-52
(Advance abstract in Japanese is available) [more] OCS2017-47 OPE2017-79 LQE2017-52
pp.57-60
LQE, LSJ 2016-05-20
09:55
Fukui   Wavelength-dependent photodetection characteristics of APDs fabricated by standard CMOS process
Koichi Iiyama, Zul Atfyi Fauzan bin Mohammed Napiah, Takuya Hishiiki (Kanazawa Univ.) LQE2016-9
Avalanche photodiodes fabricated by standard CMOS process (CMOS-APD) have features of high avalanche gain less than 10,V... [more] LQE2016-9
pp.37-41
OFT, OCS
(Joint)
2015-08-27
17:05
Hokkaido   Full set mode analysis of three mode fibers calculated from polarization components of Near-Field Pattern
Yasuo Kokubun, Tatsuhiko Watanabe, Kohei Morita, Ryo Kawata (Yokohama Nat'l Univ.) OCS2015-34
We propose and demonstrate a novel mode analysis method which can obtain a full set of amplitude excitation ratio, phase... [more] OCS2015-34
pp.19-24
ED 2014-10-21
16:20
Hokkaido Hokkaido Univ. (Faculty House Trillium) High sensitivity photodetection utilizing carrier multiplication in a-Se
Tomoaki Masuzawa (Shizuoka Univ.), Masanori Onishi, Taishi Ebisudani, Akinori Ohata, Reina Tsukimura, Jun Ochiai, Ichitaro Saito (ICU), Takatoshi Yamada (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Ken Okano (ICU) ED2014-67
Amorphous selenium (a-Se) is a promising material for high-sensitivity photodetector due to its high spatial resolution,... [more] ED2014-67
pp.25-28
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
09:50
Kyoto Doshisha University Fundamental Investigation of a Photodetector Using Nb Wire and Metal Stripe
Shinichiro Ohnuki, Yohei Sekiguchi, Go Fujii, Shuichiro Inoue (Nihon Univ.) PN2013-63 OPE2013-177 LQE2013-163 EST2013-112 MWP2013-83
We propose a photodetector which consists of a metal stripe and Nb nano wire inside an optical fiber. In this device, el... [more] PN2013-63 OPE2013-177 LQE2013-163 EST2013-112 MWP2013-83
pp.193-196
LQE, OPE 2013-06-21
14:00
Tokyo   GHz Response of Metamorphic InAlAs MSM Photodetector on GaAs Substrate
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.), Toshi-kazu Suzuki (JAIST) OPE2013-10 LQE2013-20
We fabricated metal-semiconductor-metal (MSM) photodetectors on metamorphic InAlAs layer grown on GaAs substrate. The de... [more] OPE2013-10 LQE2013-20
pp.19-22
LQE, LSJ 2013-05-17
16:35
Ishikawa   GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2013-15
To realize an optical interconnect, it is necessary to integrate light sources and photodetectors on the silicon platfor... [more] LQE2013-15
pp.67-70
LQE, LSJ 2013-05-17
17:00
Ishikawa   High-Speed Response of Avalanche photodiode fabricated by 0.18um standard CMOS process
Toshiyuki Shimotori, Ryoichi Gyobu, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2013-16
Si avalanche photodiodes (APDs) with different electrode spacing are fabricated by 0.18 m standard CMOS process,... [more] LQE2013-16
pp.71-74
PN, EMT, LQE, OPE, MWP, EST, IEE-EMT [detail] 2013-01-25
17:15
Osaka Osaka Univ. (Suita) Modeling of Plasmonic Waveguides for a High Sensitivity Optical Sensor
Shinichiro Ohnuki, Yohei Sekiguchi, Go Fujii, Shuichiro Inoue (Nihon Univ) PN2012-75 OPE2012-184 LQE2012-176 EST2012-111 MWP2012-93
We propose a optical sensor which consists of a metal stripe and nano wire inside an optical fiber. In this device, elec... [more] PN2012-75 OPE2012-184 LQE2012-176 EST2012-111 MWP2012-93
pp.303-306
ED 2012-11-19
15:30
Osaka Osaka Univ. Nakanoshima Center Amorphous-selenium based Photodetector Driven by Diamond Cold Cathode
Tomoaki Masuzawa, Shingo Kuniyoshi, Masanori Onishi, Ichitaro Saito (Int'l Christian Univ.), Angel T. T. Koh, Daniel H. C. Chua (NUS), Takatoshi Yamada (AIST), Tatsuo Shimosawa (Univ. Tokyo), Ken Okano (Int'l Christian Univ.) ED2012-57
Amorphous-selenium (a-Se) based photodetectors are promising candidate for high sensitivity photo imaging devices, due t... [more] ED2012-57
pp.15-17
LQE, LSJ 2012-05-25
14:50
Fukui Univ. of Fukui (Bunkyo Campus) Characterization of hole injection type APDs fabricated by CMOS process in blue wavelength region
Toshiyuki Shimotori, Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2012-10
Multilayer optcical discs are developed to increase the capacity of Blu-ray disc. Since the multilayer disc is transpare... [more] LQE2012-10
pp.43-46
PN 2010-03-09
13:55
Okinawa Ohama Nobumoto Memorial Hall Fabrication and Characterization of 1550-nm band optical input interface for SFQ buffer memory
Satoshi Shinada, Hirotaka Terai, Zhen Wang, Naoya Wada (NICT) PN2009-99
We developed an optical input module for a superconducting single-flux-quantum (SFQ) circuit to realize broadband signal... [more] PN2009-99
pp.73-77
OPE, LQE, OCS 2009-10-23
16:55
Fukuoka   High-power RF InGaAs/InP p-i-n PD
Shigetaka Itakura, Kiyohide Sakai, Eitaro Ishimura, Masaharu Nakaji, Toshitaka Aoyagi, Yoshihito Hirano (Mitsubishi Electric Corp.) OCS2009-80 OPE2009-146 LQE2009-105
We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, an... [more] OCS2009-80 OPE2009-146 LQE2009-105
pp.191-195
ED, CPM, LQE 2006-10-06
10:20
Kyoto   Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of nex... [more] ED2006-163 CPM2006-100 LQE2006-67
pp.63-67
 Results 1 - 17 of 17  /   
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