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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 83 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
RECONF, CPSY, VLD, IPSJ-SLDM [detail] 2015-01-29
17:40
Kanagawa Hiyoshi Campus, Keio University Analyzing the Impacts of Simultaneous Supply and Threshold Voltage Tuning on Energy Dissipation in VLSI Circuits
Toshihiro Takeshita, Shinichi Nishizawa, AKM Mahfuzul Islam, Tohru Ishihara, Hidetoshi Onodera (Kyoto Univ) VLD2014-129 CPSY2014-138 RECONF2014-62
Simultaneous supply and threshold voltage tuning has a strong impact on the energy reduction of LSI circuits. Therefore,... [more] VLD2014-129 CPSY2014-138 RECONF2014-62
pp.111-116
SDM 2015-01-27
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] SDM2014-143
pp.33-36
IT 2014-09-19
10:15
Chiba   A (k,n)-Threshold Scheme with Detectability of All the Cheaters Based on a Certain Majority Rule
Noriaki Shimazaki, Hiroki Koga (Univ. of Tsukuba) IT2014-44
In Shamir's $(k,n)$-threshold scheme, if cheaters are involved in $k$ participants and give illegal shares in the recons... [more] IT2014-44
pp.19-24
ICD, SDM 2014-08-05
14:55
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage
Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature
Instability (BTI), become dominant on inte... [more]
SDM2014-79 ICD2014-48
pp.93-98
EMM 2014-05-15
14:30
Tokyo   Secret Sharing based on Image Representation using Compressed Sensing
Michiharu Niimi, Shinya Isaki, Hideki Noda (KIT) EMM2014-2
Due to the development of information technology, many types of data including documents, image and audio, etc. is digit... [more] EMM2014-2
pp.5-10
NLP 2014-03-10
11:15
Tokyo Sophia University A Study of Hysteresis Relaxation Oscillator Driven by a Periodic Square Wave
Takuya Kurihara, Kenya Jin'no (Nippon Inst. of Tech.) NLP2013-167
In order to clarify synchronization phenomena, we analyze a relaxation oscillator which contains a hysteresis element.
... [more]
NLP2013-167
pp.15-20
SDM 2014-01-29
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors
Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) SDM2013-142
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistor... [more] SDM2013-142
pp.31-34
SDM 2013-12-13
17:00
Nara NAIST A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132
4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] SDM2013-132
pp.97-100
EMM, ISEC, SITE, ICSS, IPSJ-CSEC, IPSJ-SPT [detail] 2013-07-19
09:10
Hokkaido   A Note on a Construction of Gateway Threshold Password-based Authenticated Key Exchange
Yukou Kobayashi, Naoto Yanai, Takashi Nishide, Eiji Okamoto (Univ. of Tsukuba) ISEC2013-35 SITE2013-30 ICSS2013-40 EMM2013-37
Password-based authenticated key exchange (PAKE) allowing users to utilize passwords as secret information is suitable f... [more] ISEC2013-35 SITE2013-30 ICSS2013-40 EMM2013-37
pp.247-254
VLD, IPSJ-SLDM 2013-05-16
09:00
Fukuoka Kitakyushu International Conference Center Performance-driven SRAM Macro Design with Parameterized Cell Considering Layout-dependent Effects
Yu Zhang, Shigetoshi Nakatake (Univ. of Kitakyushu) VLD2013-1
In nano-scale process, shallow trench isolation (STI) stress and well
proximity effect (WPE) affect the threshold volta... [more]
VLD2013-1
pp.1-6
IT, ISEC, WBS 2013-03-08
11:20
Osaka Kwansei Gakuin Univ., Osaka-Umeda Campus Evaluations of Cheating-Detection Capability in the (k,n)-Threshold Scheme Based on the Majority Rule
Noriaki Shimazaki, Hiroki Koga (Univ. of Tsukuba) IT2012-91 ISEC2012-109 WBS2012-77
The $(k,n)$-threshold scheme is a kind of secret sharing scheme.
In this scheme,a secret is encoded to $n$ shares and ... [more]
IT2012-91 ISEC2012-109 WBS2012-77
pp.181-188
IT, ISEC, WBS 2013-03-08
15:10
Osaka Kwansei Gakuin Univ., Osaka-Umeda Campus Threshold Algorithms for Decoding Spinal Codes
Yu Morishima, Ikuo Oka, Shingo Ata (Osaka City Univ.) IT2012-109 ISEC2012-127 WBS2012-95
Spinal codes are a recently proposed rateless code that achieves Shannon capacity on additive white Gaussian noise chann... [more] IT2012-109 ISEC2012-127 WBS2012-95
pp.297-302
EMM 2013-01-30
11:10
Miyagi Tohoku Univ. A Secret Sharing Method for String Data Incorporating Their Transformation
Kana Tsukui, Hidetoshi Yokoo (Gunma Univ.) EMM2012-100
Most real data are essentially string data, i.e., sequences of symbols.
This paper proposes a practical secret sharing... [more]
EMM2012-100
pp.53-58
ICD, SDM 2012-08-02
10:00
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique
Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] SDM2012-65 ICD2012-33
pp.13-16
RCS, NS, USN
(Joint)
2012-07-19
13:20
Iwate Iwate Univ. Experimental Evaluations on User Pair Selection for 4-by-2 MU-MIMO Using AMC with Outer-Loop Threshold Control in LTE-Advanced Downlink
Keisuke Saito, Yuichi Kakishima, Teruo Kawamura, Yoshihisa Kishiyama (NTT DOCOMO), Hidekazu Taoka (DOCOMO Euro Labs.), Hidehiro Andoh (NTT DOCOMO) RCS2012-79
This paper presents laboratory experimental results on user pair selection for 4-by-2 multi-user (MU)-MIMO employing min... [more] RCS2012-79
pp.25-30
ICD 2012-04-24
14:50
Iwate Seion-so, Tsunagi Hot Spring (Iwate) Device-Conscious Circuit Designs for 0.5-V High-Speed Nanoscale CMOS LSIs
Akira Kotabe, Kiyoo Itoh, Riichiro Takemura, Ryuta Tsuchiya (Hitachi), Masashi Horiguchi (Renesas) ICD2012-15
The feasibility of 0.5-V memory-rich nanoscale CMOS LSIs was studied. First, nanoscale fully-depleted MOSFETs (FD MOS) a... [more] ICD2012-15
pp.79-84
NLP 2012-04-20
11:10
Mie Ise City Plaza Fundamental Characteristic of Hysteresis Domain Partitioning Optimization Method
Kenya Jin'no (NIT), Masafumi Kubota, Toshimichi Saito (Hosei Univ.) NLP2012-15
In this article, we propose a novel optimization problem solver. The novel optimization problem
The search area is dis... [more]
NLP2012-15
pp.79-82
MBE 2012-01-27
12:00
Fukuoka Kyushu University On the Automatic Thresholding for Arrhythmia Detection Using Antidictionary Coding
Takahiro Ota, Kiyokatsu Maruyama, Shinya Otagiri (NPIT), Hiroyoshi Morita (UEC) MBE2011-82
An arrhythmia detection system using antidictionary coding has been proposed, and the system has the advantage of real-t... [more] MBE2011-82
pp.21-26
NLP 2011-11-09
14:30
Okinawa Miyako Island Marine Terminal Dynamics analysis of charge pump with threshold control
Takato Endo, Toshimichi Saito (HU) NLP2011-101
This paper studies basic dynamics of charge pump circuits with a threshold control.
Adjusting the threshold value, the... [more]
NLP2011-101
pp.55-59
SDM 2011-10-21
14:00
Miyagi Tohoku Univ. (Niche) [Invited Talk] Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] SDM2011-110
pp.73-78
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