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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2023-05-19 16:05 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)  ED2023-6 CPM2023-6 SDM2023-23 |
[more] | ED2023-6 CPM2023-6 SDM2023-23 pp.24-27 |
| CPM, ED, SDM | 2023-05-19 17:20 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26 |
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] | ED2023-9 CPM2023-9 SDM2023-26 pp.36-39 |
| SDM, ED, CPM | 2022-05-27 14:40 |
Online | Online | Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] | ED2022-10 CPM2022-4 SDM2022-17 pp.13-16 |
| ED, SDM, CPM | 2021-05-27 13:45 |
Online | Online | Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure Manami Shimokawa, Shuhei Sonoi, Riku Katamawari, Yasuhiko Ishikawa (TUT) ED2021-2 CPM2021-2 SDM2021-13 |
Ge epitaxial layer on Si has been used in silicon photonics as a material for photodetectors and optical intensity modul... [more] | ED2021-2 CPM2021-2 SDM2021-13 pp.7-10 |
| SDM, ED, CPM | 2019-05-16 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9 |
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] | ED2019-11 CPM2019-2 SDM2019-9 pp.5-8 |
| SDM, ED, CPM | 2019-05-16 14:40 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-14 CPM2019-5 SDM2019-12 |
Ge epitaxial layers on Si-on-insulator (SOI) wafer have been widely used for photodetectors operating in the C band (1.5... [more] | ED2019-14 CPM2019-5 SDM2019-12 pp.21-24 |
| ED, CPM, SDM | 2018-05-24 16:15 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15 |
[more] | ED2018-20 CPM2018-7 SDM2018-15 pp.29-32 |
| LQE | 2018-02-23 10:35 |
Kanagawa | [Special Invited Talk]
Epitaxial Growth of Ge on Si and Photodetector Applications Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152 |
Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength ran... [more] | LQE2017-152 pp.7-10 |
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| OFT, OCS, OPE (Joint) [detail] |
2016-02-19 09:00 |
Okinawa | Okinawa Univ. | High-performance Ge-on-Si Near-infrared Photodiodes Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227 |
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by ultrahigh-vacuum che... [more] |
OCS2015-107 OFT2015-62 OPE2015-227 pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE) |
| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-23 17:40 |
Kyoto | Doshisha University | Si-Ge-Silica monolithic photonic integration platform and application to a WDM receiver Hidetaka Nishi, Tatsuro Hiraki, Tai Tsuchizawa, Rai Kou, Kotaro Takeda (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Hiroshi Fukuda, Koji Yamada, Tsuyoshi Yamamoto (NTT) PN2013-60 OPE2013-174 LQE2013-160 EST2013-109 MWP2013-80 |
[more] | PN2013-60 OPE2013-174 LQE2013-160 EST2013-109 MWP2013-80 pp.141-146 |
| OPE | 2013-12-20 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics and analysis of germanium waveguide photodiode under high voltage driving Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140 |
We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-vo... [more] | OPE2013-140 pp.13-18 |
| LQE, CPM, EMD, OPE, R | 2012-08-24 13:10 |
Miyagi | Tohoku Univ. | Monolithic integration of silica AWG and Ge PDs on Si photonic platform for one-chip WDM receiver Hidetaka Nishi, Tai Tsuchizawa, Rai Kou, Tatsuro Hiraki, Hiroshi Fukuda (NTT), Yasuhiko Ishikawa, Kazumi Wada (U. of Tokyo), Koji Yamada (NTT) R2012-43 EMD2012-49 CPM2012-74 OPE2012-81 LQE2012-47 |
[more] | R2012-43 EMD2012-49 CPM2012-74 OPE2012-81 LQE2012-47 pp.107-110 |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-27 15:45 |
Osaka | Osaka Univ. | Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rai Kou, Sungbong Park (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Seiichi Itabashi (NTT) PN2010-36 OPE2010-149 LQE2010-134 |
Fast optical power stabilization is demonstrated using a germanium photodiode and a silicon variable optical attenuator ... [more] | PN2010-36 OPE2010-149 LQE2010-134 pp.53-56 |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2010-11-30 17:15 |
Fukuoka | Kyushu University | [Invited Talk]
Photonic-electronic Convergence Technology Based on Silicon
-- Integration of photomic and electric circuits utilizing Siliconphotonics -- Seiichi Itabashi, Tai Tsuchizawa, Koji Yamada, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rei Takahashi (NTT Corp.), Kazumi Wada, Yasuhiko Ishikawa (Univ. of Tokyo.) VLD2010-71 DC2010-38 |
Photonic-electronic convergence technology based on silicon is presented. Siliconphotonics technology which is aiming at... [more] | VLD2010-71 DC2010-38 pp.105-106 |
| OPE | 2009-12-18 16:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Synchronized Operation of a Monolithically-Integrated Si VOA and Ge Photodiode Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo.), Seiichi Itabashi (NTT) OPE2009-169 |
We have investigated monolithically integrated Ge p-i-n photodiodes and Si variable optical attenuators (VOAs). The Ge p... [more] | OPE2009-169 pp.47-52 |
| PN, OPE, EMT, LQE | 2009-01-29 09:20 |
Kyoto | Kyoto Institute Technology (Matsugasaki Campus) | Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada (Univ. of Tokyo) PN2008-44 OPE2008-147 LQE2008-144 |
[more] | PN2008-44 OPE2008-147 LQE2008-144 pp.11-15 |
| OPE | 2008-12-19 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Si quantum wells by thermal oxidation and Er-doped structures Ryusuke Osaki, Yasuhiko Ishikawa (Univ. of Tokyo), Yoshifumi Yamashita, Yoichi Kamiura (Okayama Univ.), Kazumi Wada (Univ. of Tokyo) OPE2008-138 |
Er-doped Si has attracted much attention as a possible candidate for 1.5 μm light-emitting material in Silicon photonics... [more] | OPE2008-138 pp.11-16 |
| OPE | 2007-12-14 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | PL evaluation of Si Ring Resonators Shiyun Lin, Yosuke Kobayashi, Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo) |
The photoluminescence enhancements in isolated Si microring resonators fabricated on a Si-on-insulator (SOI) wafer is ob... [more] | OPE2007-141 pp.31-35 |
| OPE | 2007-12-14 16:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Spectral responsivity of Ge pin photodiodes on silicon-on-insulator via selective epitaxial growth Sungbong Park, Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Seiichi Itabashi (NTT) |
We investigated the strain effect on spectral responsivity of Ge photodiodes. Ge vertical pin photodiodes with the size ... [more] | OPE2007-144 pp.47-51 |
| ED, SDM | 2006-01-26 13:30 |
Hokkaido | Hokkaido Univ. | - Yasuhiko Ishikawa, Tochihiro Yamamoto, Michiharu Tabe (Shizuoka Univ.) |
[more] | ED2005-224 SDM2005-236 pp.1-6 |
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